Abstract
Chapter 9 considers the most important types of lasers involving high-density active media, namely solid-state, dye, and semiconductor lasers. The chapter concentrates on examples in widest use whose characteristics are representative of a whole class of lasers. The main emphasis is on the laser’s physical behavior and how this relates to general concepts developed in previous chapters. Some engineering details are also given with the aim of providing a better insight into the behavior of particular lasers. To complete the picture, data relating to laser performances (e.g., oscillating wavelength(s), output power or energy, wavelength tunability, etc.) are also included to suggest laser applications. The following items are generally covered for each laser: Relevant energy levels, excitation mechanisms, characteristics of the laser transition, engineering details of the laser’s structure(s), characteristics of the output beam, and applications.
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References
A. A. Kaminskii, Crystalline Lasers: Physical Processes and Operating Systems (CRC Press, 1996 ).
T. H. Maiman, Stimulated Optical Radiation in Ruby Masers, Nature 187, 493 (1960).
T. H. Maiman, Optical Maser Action in Ruby, Brit. Commun. Electron. 7, 674 (1960).
W. Koechner, Solid-State Laser Engineering, 4th ed. (Springer Berlin, 1996), Sects. 2.2, 3. 6. 1.
Ref. 4, Sects. 2.3.1., 3.6.3.
E. Snitzer and G. C. Young, Glass Lasers, in Lasers,vol. 2 (A. K. Levine, ed.) (Marcel Dekker, NY. 1968), Chap. 2.
Ref. 4, Sect. 2.3.4.
T. Y. Fan, Diode-Pumped Solid-State Lasers, in Laser Sources and Applications ( A. Miller and D. M. Finlayson, eds.) ( Institute of Physics, Bristol, 1996 ), pp. 163–93.
P. Lacovara et al.,Room-Temperature Diode-Pumped Yb:YAG Laser, Opt. Letters 16, 1089 (1991).
H. Bruesselbach and D. S. Sumida, 69-W-average-power Yb:YAG Laser, Opt. Letters 21, 480 (1996).
G. Huber, Solid-State Laser Materials, in Laser Sources and Applications ( A. Miller and D. M. Finlayson, eds.) ( Institute of Physics, Bristol, 1996 ), pp. 141–62.
E. V. Zharikov et al., Soy. J Quantum Electron. 4, 1039 (1975).
S. J. Hamlin, J. D. Myers, and M. J. Myers, High-Repetition Rate Q-Switched Erbium Glass Lasers, in E_vesafe Lasers: Components, Systems, and Applications (A. M. Johnson, ed.) SPIE 1419, 100 (1991).
S. Taccheo, P. Laporta, S. Longhi, O. Svelto, and C. Svelto, Diode-Pumped Bulk Erbium-Ytterbium Lasers, Appl. Phys. B63, 425 (1996).
D. Sliney and M. Wolbarsht, Safety with Lasers and Other Optical Sources ( Plenum. NY, 1980 ).
T. Y. Fan, G. Huber, R. L. Byer, and P. Mitzscherlich, Spectroscopy and Diode Laser-Pumped Operation of Tm, Ho:YAG, IEEE J Quantum Electron. QE-24, 924 (1988).
D. C. Hanna, Fibre Lasers, in Laser Sources and Applications ( A. Miller and D. M. Finlayson. eds.) ( Institute of Physics, Bristol, 1996 ), pp. 195–208.
E. Snitzer, Optical Maser Action on Nd3} in a Barium Crown Glass, Phys. Rev. Letters 7, 444 (1961).
J. C. Walling, O. G. Peterson, H. P. Jenssen, R. C. Morris, and E. W. O’Dell, Tunable Alexandrite Lasers. IEEE J Quantum Electron. QE-16, 1302 (1980).
L. F. Mollenauer, Color Center Lasers, in Laser Handbook, vol. 4 ( M. L. Stitch and M. Bass, eds.) (North Holland, Amsterdam, 1985 ), pp. 143–228.
P. F. Moulton, Spectroscopy and Laser Characteristics of Ti:A17O3, J Opt. Soc. Am. B 3, 125 (1986).
G. Huber, Solid-State Laser Materials: Basic Properties and New Developments, in Solid-State Lasers: New Developments and Applications (M. Inguscio and R. Wallenstein, eds.) (Plenum, NY, I993 ), pp. 67–81.
P. Albers, E. Stark, and G. Huber, Continuous-Wave Laser Operation and Quantum Efficiency of Titanium-Doped Sapphire, J Opt. Soc. Am. B 3, 134 (1986).
S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, and H. W. Newkirk, Laser Performance of LiSrA1F6:Cr3+ J Appl. Phys. 66, 1051 (1989).
S. A. Payne L. L. Chase, H. W. Newkirk, L. K. Smith, and W. F. Krupke, LiCaAlF5:Cr3+: A Promising New Solid-State Laser Material, IEEE J Quantum Electron. QE-24, 2243 (1988).
Dye Lasers, 2d ed (F. P. Schäfer, ed.) ( Springer-Verlag, Berlin, 1977 ).
H. D. Försterling and H. Kuhn, Physikalische Chemie in Experimenten. Ein Praktikum (Verlag Chemie. Weinheim, Germany 1971 ).
J. T. Verdeyen, Laser Electronics, 3d ed. (Prentice-Hall, Englewood Cliffs, NJ, 1995), Fig. 10. 19.
P. P. Sorokin and J. R. Lankard, Stimulated Emission Observed from an Organic Dye. Chloro-Aluminum Phtalocyanine, IBM J Res. Dee 10, 162 (1966).
F. P. Schafer, F. P. W. Schmidt, and J. Volze, Organic Dye Solution Laser, Appl. Phys. Letters 9, 306 (1966).
Semiconductor Lasers: Past, Present, Future (G. P. Agrawal, ed.) (AIP, Woodbury, NY. 1995).
G. P. Agrawal and N. K. Dutta, Long-Wavelength Semiconductor Lasers ( Chapman and Hall, NY, 1986 ).
N. G. Basov, O. N. Krokhin, and Y. M. Popov, Production of Negative Temperature States in p-n Junctions of Degenerate Semiconductors, Journal Exp. Theoret. Physics 40, 1320 (1961).
R. N. Hall, G. E. Fenner. J. D. Kinhsley, F. H. Dills, and G. Lasher, Coherent Light Emission from GaAs Junctions. Phys. Rev. Letters 9, 366 (1962).
M. I. Nathan. W. P. Dumke, G. Burns, F. H. Dills, and G. Lasher, Stimulated Emission of Radiation from GaAs p-n Junctions, Appl. Phys. Letters 1. 62 (1962).
N. Holonyak, Jr. and S. F. Bevacqua, Coherent (Visible) Light Emission from Ga(As:_,P,) Junctions, Appl. Phis. Letters 1, 82 (1962).
T. M. Quist, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, R. H. Rediker, and H. J. Zeiger, Semiconductor Maser of GaAs, Appl. Phys. Letters 1, 91 (1962).
Z. I. Alferov, V. M. Andreev, V. I. Korolkov, E. L. Portnoi, and D. N. Tretyakov, Coherent Radiation of Epitaxial Heterojunction Structures in the AlAs-GaAs System, Soviet. Phys. Semicond. 2, 1289 (1969).
I. Hayashi, M. B. Panish, and P. W. Foy, A Low-Threshold Room-Temperature Injection Laser, IEEE J Quantum Electron. QE-5, 211 (1969).
H. Kressel and H. Nelson, Close Confinement Gallium Arsenide p-n Junction Laser with Reduced Optical Losses at Room Temperature, RCA Rev. 30, 106 (1969).
N. Chinone, H. Nakashima, I. Ikushima, and R. Ito, Semiconductor Lasers with a Thin Active Layer (0.1 inn) for Optical Communications, Appl. Opt. 17. 311 (1978).
D. Botez, Analytical Approximation of the Radiation Confinement Factor for the TE0 Mode of a DoubleHeterojunction Laser, IEEE J Quantum Electron. QE-14, 230 (1978).
J. J. Coleman. Quantum-Well Heterostructure Lasers, in Semiconductor Lasers: Past, Present, Future (G. P. Agrawal. ed.) (AIP, Woodbury, NY, 1995), Fig. 1. 6.
Quantum Well Lasers (Peter S. Zory, ed.) (Academic Press, Boston, 1993).
Ref. 32. Figs. 9.8. 9.10.
Ref. 44. Chap. 3.
H. Kogelnik and C. V. Shank, Stimulated Emission in a Periodic Structure, Appl. Phys. Letters 18, 152 (1971).
Ref. 32. Chap. 7.
N. Chinonc and M. Okai, Distributed Feed-Back Semiconductor Lasers, in Semiconductor Lasers: Past, Present, Future (G. P. Agrawal, ed.) (AIP, Woodbury, NY, 1995), Chap. 2, pp. 28–70.
H. A. Haus and C. V. Shank, Antisymmetric Taper of Distributed Feedback Lasers, IEEE J Quantum Electron. QE-12, 532 (1976).
C. J. Chang-Hasnain, Vertical-Cavity Surface-Emitting Lasers, in Semiconductor Lasers: Past, Present, Future (G. P. Agrawal, ed.) (AIP, Woodbury, NY, 1995), Chap. 4, pp. 110–44.
C. J. Chang-Hasnain, J. P. Harbison, C.-H. Zah, M. W. Maeda, L. T. Florenz, N. G. Stoffel. and T.-P. Lee, Multiple Wavelength Tunable surface-Emitting Laser Array, IEEE.1 Quantum Electron. QE-27, 1368 (1991).
G.-I. Hatakoshi, Visible Semiconductor Lasers, in Semiconductor Lasers: Past, Present, Future (G. P. Agrawal, ed.) (AIP, Woodbury, NY, 1995), Chap. 6, pp. 181–207.
S. Nakamura et al., Japn. J Appl. Phys. 35 L74 (1994).
P. Moulton, New Developments in Solid-State Lasers, Laser Focus 14. 83 (May 1983).
J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho. Science 264, 553 (1994).
M. Bass, T. F. Deutsch, and M. J. Weber. Dye Lasers, in Lasers, Vol. 3 ( A. K. Levine and A. De Maria, eds.) (Marcel Dekker, NY, 1971 ) p. 275.
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Svelto, O. (1998). Solid-State, Dye, and Semiconductor Lasers. In: Principles of Lasers. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6266-2_9
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DOI: https://doi.org/10.1007/978-1-4757-6266-2_9
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