Abstract
Photons absorbed by a semiconductor can induce three types of electron transitions involving the bands of the solid: (i) electron transitions from a filled band to a conduction band, (ii) electron transitions to or from an adsorbate or an equivalent surface state, or (iii) electron transitions to or from energy levels in the forbidden gap region in the bulk material. The last case is generally of little interest in surface studies even though it is of great interest in fluorescence and other bulk properties. Absorption associated with surface states is of interest because it can provide information about the energy levels at the surface.
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References
W. Shockley and W. T. Read, Jr., Phys. Rev. 87, 835 (1952).
A. Many, Y. Goldstein, and N. B. Grover, Semiconductor Surfaces ( Interscience, New York, 1965 ).
D. R. Frankl, Electrical Properties of Semiconductor Surfaces,(Pergamon, London, 1967 ).
A. Many and D. Gerlich, Phys. Rev. 107, 404 (1957).
Reference 3, p. 237.
S. R. Morrison, J. Vac. Sci. Tech. 7, 84 (1970).
R. J. Collins and D. G. Thomas, Phys. Rev. 112, 388 (1958).
K. M. Sancier, Surface Sci. 21, 1 (1970).
S. R. Morrison, in Surface Physics of Phosphors and Semiconductors, eds. C. G. Scott and C. E. Reed ( Academic Press, New York, 1975 ).
F. F. Volkenshtein and I. V. Karpenko, in Surface Properties of Semiconductors, p. 79, ed. A. N. Frumkin ( Consultants Bureau, New York, 1964 ).
P. Mark, Catal. Rev. 1, 165 (1967).
L. K. Galbraith and T. E. Fischer, Surface Sci. 30, 185 (1972).
S. Baidyaroz, W. R. Bottoms, and P. Mark, Surface Sci. 28, 517 (1971).
S. R. Morrison, Adv. Catal. 7, 259 (1955).
D. A. Melnick, J. Chem. Phys. 26, 1136 (1957).
D. B. Medved, J. Chem. Phys. 28, 870 (1958); J. Phys. Chem. Sol. 20, 255 (1961).
E. Arijs, F. Cardon, and W. Maenhout-Van der Vorst, Z. Phys. Chem. NF 94, 255 (1975).
D. Eger, Y. Goldstein, and A. Many, RCA Rev. 36, 508 (1975).
G. Heiland, 2nd Int. Conf. on Electrophotography, p. 117, Soc. Phot. Sci. and Engrs., Oct., 1973.
W. Hirschwald and E. Thull, Disc. Faraday Soc. 58, 176 (1974).
D. G. Thomas, J. Phys. Chem. Solids 3, 229 (1957).
J. Cunningham, E. Finn, and N. Samman, Disc. Faraday Soc. 58, 160 (1974).
F. Steinbach and R. Harborth, Disc. Faraday Soc. 58, 143 (1974).
K. Hauffe and H. Volz, Ber. Bunsenges. Phys. Chem. 77, 967 (1973).
Y. Shapira, S. M. Cox, and D. Lichtman, Surface Sci. 54, 43 (1976).
M. F. Chung and H. E. Farnsworth, Surface Sci. 25, 321 (1972).
K. Tanaka and G. Blyholder, J. Phys. Chem. 76, 3184 (1972).
N. Wong, Y. B. Taarit, and J. H. Lunsford, J. Chem. Phys. 60, 2148 (1974).
C. L. Balestra and H. C. Gatos, Surface Sci. 28, 563 (1971).
C. E. Weitzel and L. K. Monteith, Surface Sci. 44, 438 (1974).
C. E. Weitzel and L. K. Monteith, Surface Sci. 40, 555 (1973).
R. L. Nelson and J. W. Hale, Disc. Faraday Soc. 52, 77 (1971).
M. Petrera, F. Trifiro, and G. Benedek, Jap. J. Appl. Phys., Suppl. 2, Pt. 2, 315 (1974).
M. Hughes, FATIPEC Congr. 10, 67 (1970).
R. I. Bickley, G. Munuera, and F. S. Stone, J. Catal. 31, 398 (1973).
H. G. Völz, G. Kämpf, and H. G. Fitzky, Farbe u. Lack. 78, 1037 (1972).
A. H. Boonstra and C. A. H. A. Mutsaers, J. Phys. Chem. 79, 1694 (1975).
I. S. McLintock and M. Ritchie, Trans. Faraday Soc. 61, 1007 (1965).
R. I. Bickley and R. K. M. Jayantz, Disc. Faraday Soc. 58, 194 (1974).
J. J. Kelly and J. K. Vondeling, J. Electrochem. Soc. 122, 1103 (1975).
F. Möllers, H. J. Tolle, and R. Memming, J. Electrochem. Soc. 121, 1160 (1974).
J. Cunningham and H. Zainal, J. Phys. Chem. 76, 2362 (1972).
Th. Volkenshtein, Adv. Catal. 23, 157 (1973).
F. F. Volkenshtein and V. B. Nagaev, Kinet. Catal. 14, 325, 1291 (1974); 16, 320 (1975).
K. Tanaka and G. Blyholder, J. Phys. Chem. 75, 1037 (1971).
J. Cunningham, J. J. Kelly, and A. L. Penny, J. Phys. Chem. 75, 617 (1971).
J. Cunningham and A. L. Penny, J. Phys. Chem. 76, 2353 (1972).
A. Fujishima and K. Honda, Nature 238, 37 (1972).
M. S. Wrighton, D. S. Ginley, P. T. Wolczanski, A. B. Ellis, D. L. Morse, and A. Linz, Proc. Natl. Acad. Sci. USA 72, 1518 (1975).
T. Ohnishi, Y. Nakato, and H. Tsubomura, Ber. Bunsenges. Phys. Chem. 79, 523 (1975).
K. L. Hardee and A. J. Bard, J. Electrochem. Soc. 122, 739 (1975).
H. Kim and H. A. Laitenen, J. Electrochem. Soc. 122, 53 (1975).
J. G. Mavroides, D. I. Tchernev, J. A. Kafalas, and D. F. Kolesar, Mat. Res. Bull. 10, 1023 (1975).
F. Romero-Rossi and F. S. Stone, 2nd Int. Congr. on Catalysis, p. 1486, Paris, 1960.
V. S. Zakharenko, A. E. Cherkashin, and N. P. Keier, Dokl. Akad. Nauk. S.S.S.R. 211, 628 (1973).
F. Steinbach and R. Barth, Ber. Bunsenges. Phys. Chem. 73, 884 (1969).
K. Tanaka and G. Blyholder, J. Phys. Chem. 76, 1807 (1972).
W. Doerffler and K. Hauffe, J. Catal. 3, 17 (1964).
A. Thevenet, F. Juillet and S. J. Teichner, Jap. J. Appl. Phys., Suppl. 2, Pt. 2, 529 (1974).
G. Irick, Jr., J. Appl. Polym. Sci. 16, 2387 (1972).
H. Knoll and U. Kühnhold, Angew. Chem. Int. Ed. 6, 978 (1967).
W. A. Weyl and T. Forland, Ind. Eng. Chem. 42, 257 (1950).
P. F. Cornaz and G. C. A. Schuit, Disc. Faraday Soc. 41, 290 (1966).
A. J. Tench and T. Lawson, Chem. Phys. Lett. 7, 459 (1970); 8, 177 (1971).
N. Djeghri, M. Formenti, F. Juillet, and S. J. Teichner, Disc. Faraday Soc. 58, 185 (1974).
R. I. Bickley and F. S. Stone, J. Catal. 31, 389 (1973).
V. N. Filimonov, Kinet. Katal. 7, 512 (1966).
S. P. Pappas and R. M. Fischer, J. Paint Tech. 46, 65 (1974).
K. Sancier and S. R. Morrison, Surface Sci. 36, 622 (1973).
K. Tanaka and G. Blyholder, J. Phys. Chem. 76, 1394 (1972).
S. R. Morrison and T. Freund, J. Chem. Phys. 47, 1543 (1967).
E. Inoue, in Current Problems in Electrophotography, p. 146, eds. W. F. Berg and K. Hauffe ( deGruyter, Berlin, 1972 ).
H. Meier, Spectral Sensitization ( Focal Press, London, 1968 ).
M. Vodenicharova and G. H. Jensen, J. Phys. Chem. Solids 36, 1241 (1975).
G. Heiland and W. Bauer, Tappi 56, 83 (1973).
B. Pettinger, H.-R. Schöppel, and H. Gerischer, Ber. Bunsenges. Phys. Chem. 77, 960 (1973).
H. Yoneyama, Y. Toyoguchi, and H. Tamura, J. Phys. Chem. 76, 3460 (1972).
H. Tributsch and H. Gerischer, Ber. Bunsenges. Phys. Chem. 73, 582 (1969).
H. Gerischer and H. Tributsch, Ber. Bunsenges. Phys. Chem. 72, 437 (1968).
U. Bode, K. Hauffe, Y. Ishikawa, and H. Putsch, Z. Phys. Chem. NF85, 144 (1973).
T. Freund, Surface Sci. 33, 295 (1972).
J. C. Lagowski, E. S. Sproles, Jr., and H. C. Gatos, Surface Sci. 30, 653 (1972).
C. L. Balestra, J. Lagowski, and H. C. Gatos, Surface Sci. 26, 317 (1971).
J. Lagowski, C. L. Balestra, and H. C. Gatos, Surface Sci. 29, 203, 213 (1972).
H. Li1th, Surface Sci. 37, 90 (1973).
G. Heiland and W. Mönch, Surface Sci. 37, 30 (1973).
H. LUth and G. Heiland, Phys. Stat. Solidi A 14, 573 (1972).
H. Gerischer, Disc. Faraday Soc. 58, 219 (1974).
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Morrison, S.R. (1977). Photoeffects at Semiconductor Surfaces. In: The Chemical Physics of Surfaces. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8007-2_9
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DOI: https://doi.org/10.1007/978-1-4615-8007-2_9
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