Asymmetric Field Controlled Thyristors

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Fig. 9.1 shows the structure and doping profile Baliga, 1980 of an asymmetric field controlled thyristor (AFCT). To enable this device to conduct current between the anode and cathode terminals, a small positive bias (<1V) is applied between the gate and cathode terminals. The device then behaves like a forward biased P +-i-N diode between the anode and cathode terminals. An AFCT can operate at large current densities with a relatively small forward voltage drop because of a large concentration of excess carriers injected into the N - (drift) region Baliga, 1987.