Chapter

Cryogenic Operation of Silicon Power Devices

Part of the series The Springer International Series in Engineering and Computer Science pp 105-115

Asymmetric Field Controlled Thyristors

  • Ranbir SinghAffiliated withPower Semiconductor Research Center, North Carolina State University
  • , B. Jayant BaligaAffiliated withPower Semiconductor Research Center, North Carolina State University

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Abstract

Fig. 9.1 shows the structure and doping profile Baliga, 1980 of an asymmetric field controlled thyristor (AFCT). To enable this device to conduct current between the anode and cathode terminals, a small positive bias (<1V) is applied between the gate and cathode terminals. The device then behaves like a forward biased P +-i-N diode between the anode and cathode terminals. An AFCT can operate at large current densities with a relatively small forward voltage drop because of a large concentration of excess carriers injected into the N - (drift) region Baliga, 1987.