Abstract
Gallium nitride (GaN) usually crystallizes in the hexagonal wurtzite structure. However, the growth of GaN films with cubic, zinc-blende structure on GaAs was reported by Mizuta et al. [1]. Since their report, the growth of cubic GaN (β-GaN) has been tried on various kinds of substrates by CVD or MBE (see Refs. [2–4]). It should be noted, however, that all these cubic polytypes grown so far have high densities of planar defects, mostly {111} microtwins and stacking faults, resulting from large lattice mismatches.
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© 1999 Springer Science+Business Media New York
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Adachi, S. (1999). Cubic Gallium Nitride (β-GaN). In: Optical Constants of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5247-5_20
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DOI: https://doi.org/10.1007/978-1-4615-5247-5_20
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