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Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates

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Book cover Silicon-based Nanomaterials

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 187))

Abstract

In this chapter we demonstrate the growth and characterization of nonpolar relaxed cubic GaN by plasma-assisted molecular beam epitaxy on prepatterned 3C-SiC/Si (001) substrates. Nanopatterning of 3C-SiC/Si (001) was achieved by two different fabrication techniques: nanosphere lithography (NSL) to generate large-area pattern, and conventional electron beam lithography (EBL) for tailoring particular surface morphologies. Both methods were followed by a lift-off and a reactive ion etching (RIE) process. We analyze the influence of the substrate on the GaN growth and show that it is possible to grow single phase and defect-reduced cubic GaN crystals on 3C-SiC nanostructures. Furthermore cubic GaN/AlN multiquantum wells were grown on 3C-SiC nanostructures, which is a further step toward nanoscaled device applications.

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Acknowledgments

The authors would like to thank L. Hiller, Th. Stauden and J. Pezoldt (TU Ilmenau) for patterning the substrates with electron beam lithography and reactive ion etching. The authors also wish to thank Th. Niendorf, K. Duschik and H.-J. Maier (University of Paderborn) for EBSD and some of the TEM measurements. We thank M. Ruth and C. Meier (University of Paderborn) for the micro-photoluminescence measurements. Furthermore we thank the team of the Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) at Forschungszentrum Jülich, in particular D. Meertens, M. Luysberg and K. Tillmann for access to and comprehensive support at the FIB and TEM facilities of ER-C. Part of the work at Paderborn was financially supported by German Science Foundation (As(107/4-1)).

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Authors and Affiliations

  1. Department of Physics, University of Paderborn, Warburger Str. 100, 33098 , Paderborn, Germany

    Ricarda Maria Kemper, Donat Josef As & Jörg K. N. Lindner

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  1. Ricarda Maria Kemper
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  2. Donat Josef As
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  3. Jörg K. N. Lindner
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Correspondence to Ricarda Maria Kemper .

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Editors and Affiliations

  1. cState Key Laboratory of Electronic, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Handong Li

  2. State Key Laboratory of Electronic Thin, University of Electronic Science and Technology of China, Chengdu, People's Republic of China

    Jiang Wu

  3. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Kemper, R.M., As, D.J., Lindner, J.K.N. (2013). Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates. In: Li, H., Wu, J., Wang, Z. (eds) Silicon-based Nanomaterials. Springer Series in Materials Science, vol 187. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8169-0_15

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