Abstract
The p–n junction diode is a simple two-terminal solid-state switch, but the theories underlying its operation encompass the central core of the semiconductor device physics. Thus, the I–V modeling of the junction diode should provide a convenient basis for modeling other kinds of semiconductor devices, including the silicon nanowire field effect transistor (SNWFET). Additionally, the p–n junction is used extensively as photodiodes, solar cells, light-emitting and laser diodes, etc. and constitutes a key element of MOSFET. This chapter is addressed to the I–V modeling and applications of the p–n junction diode and should thus provide a general background for discussing SNWFETs in the chapters to follow.
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- SNWFET:
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Silicon nanowire field effect transistor
- LED:
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Light-emitting diode
- LD:
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Laser diode
Suggested Reading
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© 2014 Springer Science+Business Media New York
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Kim, D.M., Kang, B.K., Jeong, YH. (2014). P–N Junction Diode: I–V Behavior and Applications. In: Kim, D., Jeong, YH. (eds) Nanowire Field Effect Transistors: Principles and Applications. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-8124-9_3
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DOI: https://doi.org/10.1007/978-1-4614-8124-9_3
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