Abstract
New variability resilient device architectures will be required at the 22 nm CMOS technology node and beyond due to the ever-increasing statistical variability in traditional bulk MOSFETs. A TCAD-based Preliminary Design Kit (PDK) development strategy is present here for a 10 nm SOI FinFET technology, with reliable device statistical variability coming from the comprehensive 3D statistical device simulation and accurate statistical compact modelling. Results from the statistical simulation of a 6T SRAM cell demonstrate the advantages of FinFET technology.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
Moore GE (1975) Progress in digital electronics. In: Technical digest of the international electron devices meeting. IEEE Press, p 13
Cathignol A, Cheng B et al (2008) Quantitative evaluation of statistical variability sources in a 45 nm technological node LP N-MOSFET. IEEE Electron Device Lett 29:609–611
http://download.intel.com/newsroom/kits/22nm/pdfs/22nm-Details_Presentation.pdf
Arnaud F, Colquhoun S, Mareau AL, Kohler S, Jeannot S, Hasbani F et al (2011) Technology-circuit convergence for full-SOC platform in 28 nm and beyond. In: International electron devices meeting, Digest of technical papers, pp 374–377
Dadgour H, Endo K, De V, Banerjee K (2008) Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability. In: International electron devices meeting, Digest of technical papers, pp 705–708
Cheng B, Roy S, Roy G, Adamu-Lema F, Asenov A (2005) Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid State Electron 49:740
Acknowledgement
This work was supported in part by the European Union through the EP7 Integrated Project Trams.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media New York
About this chapter
Cite this chapter
Asenov, A., Cheng, B., Brown, A.R., Wang, X. (2013). Impact of Statistical Variability on FinFET Technology: From Device, Statistical Compact Modelling to Statistical Circuit Simulation. In: van Roermund, A., Baschirotto, A., Steyaert, M. (eds) Nyquist AD Converters, Sensor Interfaces, and Robustness. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4587-6_15
Download citation
DOI: https://doi.org/10.1007/978-1-4614-4587-6_15
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-4586-9
Online ISBN: 978-1-4614-4587-6
eBook Packages: EngineeringEngineering (R0)