Abstract
A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure. Due to its importance in 3D TCAD, we describe the theoretical background of impurity diffusion based on the SUPREM-IV.GS code from Stanford University [8]. SUPREM-IV.GS is a widely recognized simulation software in TCAD and currently several commercial versions of it are available on the TCAD market, all of which inherit the physical models described in this chapter.
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Li, S., Fu, Y. (2012). Advanced Theory of TCAD Process Simulation. In: 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0481-1_2
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DOI: https://doi.org/10.1007/978-1-4614-0481-1_2
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