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Three-Dimensional Silicon–Germanium Nanostructures for CMOS-Compatible Light Emitters

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Nanotechnology for Electronics, Photonics, and Renewable Energy

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

The present status of light emitters based on SiGe nanostructures is reviewed. To be commercially valuable, these light emitters should be efficient, fast, operational at room temperature, and, perhaps most importantly, compatible with the “main stream” CMOS technology. Another important requirement is in the emission wavelength, which should match the optical waveguide low-loss spectral region, i.e., 1.3–1.6 μm. Among other approaches, epitaxially grown Si/SiGe quantum wells and quantum dot/quantum well complexes produce efficient photoluminescence (PL) and electroluminescence (EL) in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS-compatible light emitters for on-chip optical interconnects is proposed.

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Acknowledgments

We would like to acknowledge the invaluable contributions over a number of years from our many collaborators on this work and whose names are given in the references to our work in this chapter and thank especially B. Kamenev of NJIT, J.-M. Baribeau and X. Wu of NRC Canada, and T. Kamins of HP Laboratories. We acknowledge the partial financial support for this research provided by US National Science Foundation, Intel Corporation, Semiconductor Research Corporation, and Foundation at NJIT.

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  1. Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada

    D. J. Lockwood

  2. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, University Heights, Newark, NJ, 07102-9895, USA

    L. Tsybeskov

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  1. D. J. Lockwood
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  2. L. Tsybeskov
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Correspondence to D. J. Lockwood .

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    Anatoli Korkin

  2. , Physics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, 37831, Tennessee, USA

    Predrag S. Krstić

  3. , Center for Engineering Science Advanced, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, 37831, Tennessee, USA

    Jack C. Wells

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Lockwood, D.J., Tsybeskov, L. (2010). Three-Dimensional Silicon–Germanium Nanostructures for CMOS-Compatible Light Emitters. In: Korkin, A., Krstić, P., Wells, J. (eds) Nanotechnology for Electronics, Photonics, and Renewable Energy. Nanostructure Science and Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-7454-9_2

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