Summary
InxAl1-xN epilayers were grown on GaN pseudo-substrates at a range of temperatures between 900 °C and 750 °C. Indium incorporation decreased as the growth temperature was increased, and surface roughness at the 1 μm scale was observed to decrease simultaneously. However, due to macroscopic cracking of the samples grown at higher temperature, broader scale surface roughness reached a minimum at 800 °C, which corresponded to the layer most closely lattice-matched to the GaN pseudo-substrate.
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Sadler, T.C., Kappers, M.J., Vickers, M.E., Oliver, R.A. (2008). Characterisation of InxAl1-xN Epilayers Grown on GaN. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_6
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_6
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