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Transmission Electron Microscopy Study of Sb-Based Quantum Dots

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Microscopy of Semiconducting Materials 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 120))

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Summary

We have investigated the structural properties of InSb quantum dots (QDs) on top of GaSb and embedded in GaSb barrier layers. The InSb QDs were grown by molecular beam epitaxy (MBE) applying conventional growth conditions as well as a new multi-step MBE growth process consisting of deposition at a very low temperature, an annealing step and capping immediately after QD formation. Conventional MBE growth produces plastically relaxed large islands with low density. The modified MBE growth technique allows the growth of very dense, coherently strained and tiny InSb QDs with high structural perfection.

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Author information

Authors and Affiliations

  1. Paul-Drude-Institut für Festörperelektronik, Hausvogteiplatz 5–7, Berlin, 10117, Germany

    A Trampert

  2. Université Montpellier 2, CNRS, CNRSInstitut d'Electronique du Sud, UMR 5214, 34095 Montpellier cedex 5, France

    B Satpati, V Tasco, N Deguffroy, A N Baranov & E Tournié

Authors
  1. B Satpati
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  2. V Tasco
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  3. N Deguffroy
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  4. A N Baranov
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  5. E Tournié
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  6. A Trampert
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK

    P. A. Midgley

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© 2008 Springer Science+Business Media B.V.

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Satpati, B., Tasco, V., Deguffroy, N., Baranov, A., Tournié, E., Trampert, A. (2008). Transmission Electron Microscopy Study of Sb-Based Quantum Dots. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_55

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