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Photogalvanic Effects in HgTe Quantum Wells

  • Conference paper
Narrow Gap Semiconductors 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 119))

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Abstract

We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.

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References

  1. Ganichev, S.D. and Prettl, W.: Intense Terahertz Excitation of Semiconductors, Oxford University Press, 2006

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Author information

Authors and Affiliations

  1. Terahertz Center, University of Regensburg, Germany

    B. Wittmann, S. N. Danilov, R. Ravash, W. Prettl & S. D. Ganichev

  2. Institute of Semiconductor Physics, Novosibirsk, Russia

    Z. D. Kwon, N. N. Mikhailov & S. A. Dvoretsky

Authors
  1. B. Wittmann
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  2. S. N. Danilov
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  3. Z. D. Kwon
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  4. N. N. Mikhailov
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  5. S. A. Dvoretsky
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  6. R. Ravash
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  7. W. Prettl
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  8. S. D. Ganichev
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Editor information

Editors and Affiliations

  1. Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, GU2 7XH, UK

    Ben Murdin  & Steve Clowes  & 

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© 2008 Springer Science+Business Media B.V

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Wittmann, B. et al. (2008). Photogalvanic Effects in HgTe Quantum Wells. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_2

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