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Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications pp 39–62Cite as

Interconnects in ULSI Systems: Cu Interconnects Electrical Performance

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Abstract

Integrated electronic systems have advanced in complexity at an exponential rate during the last four decades, as measured by the number of transistors on a single silicon chip [1, 2]. This growth, which had major implications on economy and society, was enabled by continuous miniaturization of transistor devices and the metallic wire structures used for making interconnections among them. In recent technology generations, as a result of the scaling down of all device and wire dimensions, the interconnect structures have become dominant limiters of system performance, power, and cost [3].

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Author information

Authors and Affiliations

  1. Faculty of EE, Technion IIT, 32000, Haifa, Israel

    Avinoam Kolodny

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  1. Avinoam Kolodny
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Correspondence to Avinoam Kolodny .

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Editors and Affiliations

  1. Tel Aviv University, Ramat Aviv, Tel Aviv, 69978, Israel

    Yosi Shacham-Diamand

  2. Dept. Applied Chemistry, Waseda University, Okubo 3-4-1 , Tokyo, 169-8555, Japan

    Tetsuya Osaka

  3. Emerson Network Power, Cooligy Precision Cooling, Maude Avenue 800, Mountain View, 94043, U.S.A.

    Madhav Datta

  4. Division of Corporate Relations, The University of Tokyo, Hongo 7-3-1, Tokyo , 113-8654, Japan

    Takayuki Ohba

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Kolodny, A. (2009). Interconnects in ULSI Systems: Cu Interconnects Electrical Performance. In: Shacham-Diamand, Y., Osaka , T., Datta, M., Ohba, T. (eds) Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications. Springer, New York, NY. https://doi.org/10.1007/978-0-387-95868-2_3

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