Oxygen segregation to nanopipes in gallium nitride

Hawkridge, M; Cherns, D

doi:10.1007/3-540-31915-8_8

Oxygen segregation to nanopipes in gallium nitride

M Hawkridge³ &
D Cherns³

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

Abstract

The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.

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Authors and Affiliations

H H Wills Physics Laboratory, Royal Fort, Tyndall Avenue, Bristol, BS8 1TL
M Hawkridge & D Cherns

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M Hawkridge
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D Cherns
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Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

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Hawkridge, M., Cherns, D. (2005). Oxygen segregation to nanopipes in gallium nitride. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_8

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DOI: https://doi.org/10.1007/3-540-31915-8_8
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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