Summary
A deterministic solution method for the coupled Boltzmann-Poisson system regarding spatially two-dimensional problems is presented. The method is based on a discontinuous piecewise polynomial approximation of the carrier distribution function. The conduction band of silicon is modelled by a non-parabolic six-valley model. In particular, we applied the multicell method to simulate the transients of a silicon MESFET. The results are compared to Monte Carlo simulations.
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References
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© 2006 Springer-Verlag Berlin Heidelberg
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Ertler, C., Schürrer, F., Muscato, O. (2006). A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET. In: Di Bucchianico, A., Mattheij, R., Peletier, M. (eds) Progress in Industrial Mathematics at ECMI 2004. Mathematics in Industry, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-28073-1_14
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DOI: https://doi.org/10.1007/3-540-28073-1_14
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-28072-9
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