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References
S. F. Chichibu, S. Nakamura, eds.: Nitride Semiconductor Blue Lasers and Light Emitting Diodes (CRC Press, 2000)
E. Bründermann: Long-Wavelength Infrared Semiconductor Lasers, chapter 6, pp. 279–350 (Wiley, New York, 2004)
A. R. Beattie, P. T. Landsberg: Auger effect in semiconductors. Proc. R. Soc. London A 249, 16–29 (1959)
E. O. Kane: Band structure of indium antimonide. J. Phys. Chem. Solids 1, 249–261(1957)
A. R. Adams: Band-structure engineering for low-threshold high-efficency semiconductor lasers. Electron. Lett. 22, 249–250 (1986)
E. Yablonovitch, E. Kane: Reduction of lasing threshold current density by the lowering of valence band effective mass. J. Lightwave Technol. 4, 504–506 (1986)
G. Chen, C. L. Tien, X. Wu, J. S. Smith: Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures. J. Heat Transf. 116, 325–331 (2001)
T. Borca-Tasciuc, D. Achimov, W. L. Liu, G. Chen, H.-W. Ren, C.-H. Lin, S. S. Pei: Thermal conductivity of InAs/AlSb superlattices. Microscale Therm. Eng. 5, 225–231 (2001)
R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson: Coherent light emission from GaAs junctions. Phys. Rev. Lett. 9, 366–368 (1962)
M. I. Nathan, W. P. Dumke, G. Burns, J. Frederick H. Dill, G. Lasher: Stimulated emission of radiation from GaAs p-n junctions. Appl. Phys. Lett. 1, 62–64 (1962)
N. Holonyak, J. S. F. Bevacqua: Coherent (visible) light emission from Ga(As1−x Px) junctions. Appl. Phys. Lett. 1, 82–83 (1962)
R. N. Hall: Injection lasers. Trans. Electron Devices 23, 700–704 (1976)
I. Hayashi, M. B. Panish, P. W. Foy: A low-threshold room-temperature injection laser. J. Quant. Electron. 5, 211–212 (1969)
H. Kressel, H. Nelson: Close-confinement gallium arsenide pn junction lasers with reduced optical loss at room temperature. RCA Rev. 30, 106–113 (1969)
J. T. Olesberg, M. E. Flatté, T. F. Boggess: Comparison of linewidth enhancement factors in midinfrared active regions. J. Appl. Phys. 87, 7164 (2000)
G. H. B. Thompson, P. A. Kirkby: (GaAl)As lasers with a heterostructure for optical confinement and additional heterojunctions for extreme carrier confinement. J. Quant. Electron. 9, 311–318 (1973)
G. H. B. Thompson: Physics of Semiconductor Laser Devices (Wiley, New York, 1980)
P. W. A. McIlroy, A. Kurobe, Y. Uematsu: Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers. J. Quant. Electron. 21, 1958–1963 (1985)
L. A. Coldren, S. W. Corzine: Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995)
M. E. Flatté, J. T. Olesberg, C. H. Grein: Ideal performance of cascade and noncascade intersubband and interband long-wavelength semiconductor lasers. Appl. Phys. Lett. 75, 2020–2022 (1999)
J. T. Olesberg, M. E. Flatté, B. J. Brown, C. H. Grein, T. C. Hasenberg, S. A. Anson, T. F. Boggess: Optimization of active regions in midinfrared lasers. Appl. Phys. Lett. 74, 188–190 (1999)
J. T. Olesberg, M. E. Flatté, B. J. Brown, T. C. Hasenberg, S. A. Anson, T. F. Boggess, C. H. Grein: Comparison of mid-infrared laser diode active regions. In In-Plane Semiconductor Lasers III, volume 3628 of Proc. SPIE, pp. 148–155 (1999)
C. H. Grein, M. E. Flatté, J. T. Olesberg, S. A. Anson, L. Zhang, T. F. Boggess: Auger recombination in narrow-gap semiconductor superlattices incorporating antimony. J. Appl. Phys. 92, 7311–7316 (2002)
W.H. Lau, J. T. Olesberg, M. E. Flatté: Electron-spin decoherence in bulk and quantumwell zinc-blende semiconductors. Phys. Rev. B 64, 161301(R) (2001)
J. T. Olesberg, W. H. Lau, M. E. Flatté, C. Yu, E. Altunkaya, E. M. Shaw, T. C. Hasenberg, T. F. Boggess: Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice. Phys. Rev. B 64, 201301(R) (2001)
S. A. Anson, J. T. Olesberg, M. E. Flatté, T. C. Hasenberg, T. F. Boggess: Differential gain, differential index, and linewidth enhancement factor for a 4 µm superlattice laser active layer. J. Appl. Phys. 86, 713–718 (1999)
M. E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, D.-J. Jang, J. T. Olesberg, T. F. Boggess: Carrier recombination rates in narrow-gap InAs/GaInSb-based superlattices. Phys. Rev. B 59, 5745–5750 (1999)
D.-J. Jang, M. E. Flatté, C. H. Grein, J. T. Olesberg, T. C. Hasenberg, T. F. Boggess: Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice. Phys. Rev. B 58, 13047–13054 (1998)
J. T. Olesberg, S. A. Anson, S. W. McCahon, M. E. Flatté, T. F. Boggess, D. H. Chow, T. C. Hasenberg: Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells. Appl. Phys. Lett. 72, 229–231 (1998)
M. Panish, H. Casey, Jr., S. Sumski, P. Foy: Reduction of threshold current density in GaAs-AlxGa1−x As heterostructure lasers by separate optical and carrier confinement. Appl. Phys. Lett. 22, 590–591 (1973)
W. T. Tsang: A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam. Appl. Phys. Lett. 39, 134–137 (1981)
S. Hersee, M. Baldy, P. Assenat, B. de Cremoux, J. P. Duchemin: Low-threshold GRINSCH GaAs/GaAlAs laser structure grown by OM VPE. Electron. Lett. 18, 618–620 (1982)
J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, A. Y. Cho: Quantum cascade laser. Science 264, 553–556 (1994)
J. C. Garcia, E. Rosencher, P. Collot, N. Laurent, J. L. Guyaux, B. Vinter, J. Nagle: Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser. Appl. Phys. Lett. 71, 3752–3754 (1997)
J. K. Kim, E. Hall, O. Sjolund, L. A. Coldren: Epitaxially-stacked multiple-active-region 1.55 µm lasers for increased differential efficiency. Appl. Phys. Lett. 74, 3251–3253 (1999)
A. A. Allerman, R. M. Biefeld, S. R. Kurtz: InAsSb-based mid-infrared lasers (3.8–3.9 µm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 69, 465–467(1996)
J. R. Meyer, I. Vurgaftman, R. Q. Yang, L. R. Ram-Mohan: Type-II and type-I interband cascade lasers. Electron. Lett. 32, 45–46 (1996)
C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu, A. Y. Cho: Continuous wave operation of midinfrared (7.4–8.6 µm) quantum cascade lasers up to 110 K temperature. Appl. Phys. Lett. 68, 1745–1747 (1996)
J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, C. Sirtori, S. N. G. Chu, A. Y. Cho: Quantum cascade laser: temperature dependence of the performance characteristics and high T0 operation. Appl. Phys. Lett. 65, 2901–2903 (1994)
J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, A. Y. Cho: Vertical transition quantum cascade laser with Bragg confined excited state. Appl. Phys. Lett. 66, 538–540 (1995)
J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson, S.-N. G. Chu, A. Y. Cho: High power mid-infrared (λ ∽ 5 µm) quantum cascade lasers operating above room temperature. Appl. Phys. Lett. 68, 3680–3682 (1996)
R. Teissier, D. Barate, A. Vicet, C. Alibert, A. N. Baranov, X. Marcadet, C. Renard, M. Garcia, C. Sirtori, D. Revin, J. Cockburn: Room temperature operation of InAs/AlSb quantum cascade lasers. Appl. Phys. Lett. 85, 167–169 (2004)
J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S.-N. G. Chu, A. Y. Cho: Short wavelength (λ ∽ 3.4 µm) quantum cascade laser based on strained compensated In-GaAs/AlInAs. Appl. Phys. Lett. 72, 680–682 (1998)
C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, A. Y. Cho: Quantum cascade laser with plasmon-enhanced waveguide operating at 8.4 µm wavelength. Appl. Phys. Lett. 66, 3242–3244 (1995)
C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, A. Y. Cho: Long wavelength infrared (λ ≈ 11 µm) quantum cascade lasers. Appl. Phys. Lett. 69, 2810–2812 (1996)
A. Tredicucci, F. Capasso, C. Gmachl, D. L. Sivco, A. L. Hutchinson, A. Y. Cho, J. Faist, G. Scamarcio: High-power inter-miniband lasing in intrinsic superlattices. Appl. Phys. Lett. 72, 2388–2390 (1998)
C. Gmachl, A. Tredicucci, F. Capasso, A. L. Hutchinson, D. L. Sivco, J. N. Baillargeon, A. Y. Cho: High-power λ ∼ 8 µm quantum cascade lasers with near optimum performance. Appl. Phys. Lett. 72, 3130–3132 (1998)
C. Gmachl, F. Capasso, A. Tredicucci, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu, A. Y. Cho: Noncascaded intersubband injection lasers at λ ∼ 7.7 µm. Appl. Phys. Lett. 73, 3830–3832 (1998)
C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, U. Oesterle: GaAs/AlxGa1−x As quantum cascade lasers. Appl. Phys. Lett. 73, 3486–3488 (1998)
G. Scamarcio, C. Gmachl, F. Capasso, A. Tredicucci, A. L. Hutchinson, D. L. Sivco, A. Y. Cho: Long-wavelength (λ ≈ 11 µm) interminiband Fabry-Pérot and distributed feedback quantum cascade lasers. Semicond. Sci. Technol. 13, 1333–1339 (1998)
G. Strasser, S. Gianordoli, L. Hvozdara, W. Schrenk, K. Unterrainer, E. Gornik: GaAs/AlGaAs superlattice quantum cascade lasers at λ ≈ 13 µm. Appl. Phys. Lett. 75, 1345–1347 (1999)
A. Tredicucci, C. Gmachl, F. Capasso, D. L. Sivco, A. L. Hutchinson, A. Y. Cho: Long wavelength superlattice quantum cascade lasers at λ ≈ 17µm. Appl. Phys. Lett. 74, 638–640 (1999)
I. Melngailis: Maser action in InAs diodes. Appl. Phys. Lett. 2, 176–178 (1963)
Y. W. Tung, M. L. Cohen: Relativistic band structure and electronic properties of SnTe, GeTe, and PbTe. Phys. Rev. 180, 823–826 (1969)
S. E. Kohn, P. Y. Yu, Y. Petroff, Y. R. Shen, Y. Tsang, M. L. Cohen: Electronic band structure and optical properties of PbTe, PbSe, and PbS. Phys. Rev. B 8, 1477–1488 (1973)
D. L. Mitchell, R. F. Wallis: Theoretical energy-band parameters for the lead salts. Phys. Rev. 151, 581–595 (1966)
P. C. Findlay, C. R. Pidgeon, R. Kotitschke, A. Hollingworth, B. N. Murdin, C. J. G. M. Langerak, A. F. G. van der Meer, C. M. Ciesla, J. Oswald, A. Homer, G. Springholz, G. Bauer: Auger recombination dynamics of lead salts under picosecond free-electronlaser excitation. Phys. Rev. B 58, 12908–12915 (1998)
J. S. Blakemore: Approximations for Fermi-Dirac integrals, especially the function used to describe electron density in a semiconductor. Solid-State Electron. 25, 1067–1076 (1982)
K. L. Vodopyanov, H. Graener, C. C. Phillips, T. J. Tate: Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature. Phys. Rev. B 46, 13194–13200 (1992)
A. E. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov: Room-temperature in GaSbAs injection-lasers at the wavelength of 1.9–2.3 µm. Sov. J. Quantum Electron. 15, 869–871 (1985)
C. Caneau, A. K. Srivastava, A. G. Dentai, J. L. Zyskind, M. A. Pollack: Roomtemperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 µm. Electron. Lett. 21, 815–817 (1985)
T. H. Chiu, W. T. Tsang, J. A. Ditzenberger, J. P. van der Ziel: Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 µm prepared by molecular beam epitaxy. Appl. Phys. Lett. 49, 1051–1052 (1986)
C. Caneau, J. L. Zyskind, J. W. Sulhoff, T. E. Glover, J. Centanni, C. A. Burrus, A. G. Dentai, M. A. Pollack: 2.2 µm GaInAsSb/AlGaAsSb injection lasers with low threshold current density. Appl. Phys. Lett. 51, 764–766 (1987)
J. L. Zyskind, J. C. Dewinter, C. A. Burrus, J. C. Centanni, A. G. Dentai, M. A. Pollack: Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 µm. Electron. Lett. 25, 568–570 (1989)
H. K. Choi, S. J. Eglash: High-efficiency high-power GaInAsSb-AlGaAsSb doubleheterostructure lasers emitting at 2.3 µm. J. Quant. Electron. 27, 1555–1559 (1991)
H. K. Choi, S. J. Eglash: Room-temperature CW operation at 2.2 µm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy. Appl. Phys. Lett. 59, 1165–1166 (1991)
H. K. Choi, S. J. Eglash: High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 µm with low threshold current density. Appl. Phys. Lett. 61, 1154–1156 (1992)
A. N. Baranov, Y. Cuminal, G. Boissier, C. Alibert, A. Joullie: Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 µm at room temperature. Electron. Lett. 32, 2279–2280 (1996)
D. Z. Garbuzov, H. Lee, V. Khalfin, R. Martinelli, J. C. Connolly, G. L. Belenky: 2.3–2.7 µm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers. Photon. Technol. Lett. 11, 794–796 (1999)
C. Mermelstein, S. Simanowski, M. Mayer, R. Kiefer, J. Schmitz, M. Walther, J. Wagner: Room-temperature low-threshold low-loss continuous-wave operation of 2.26 µm GaInAsSb/AlGaAsSb quantum-well laser diodes. Appl. Phys. Lett. 77, 1581–1583 (2000)
J. G. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, D. Z. Garbuzov, W. K. Chan: Room-temperature 2.5 µm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves. Appl. Phys. Lett. 81, 3146–3148 (2002)
A. Salhi, Y. Rouillard, A. Perona, P. Grech, M. Garcia, C. Sirtori: Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm. Semicond. Sci. Technol. 19, 260–262 (2004)
A. Salhi, Y. Rouillard, J. Angellier, M. Garcia: Very-low-threshold 2.4 µm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime. Photon. Technol. Lett. 16, 2424–2426 (2004)
P. Brosson, J. Benoit, A. Joullie, B. Sermage: Analysis of threshold current density in 2.2 µm GaInAsSb/GaAlAsSb/GaSb DH lasers. Electron. Lett. 23, 417–419 (1987)
A. N. Baranov, C. Fouillant, P. Grunberg, J. L. Lazzari, S. Gaillard, A. Joullie: High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 µm. Appl. Phys. Lett. 65, 616–617 (1994)
G. W. Turner, H. K. Choi, M. J. Manfra: Ultralow-threshold (50 A/cm−1) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 µm. Appl. Phys. Lett. 72, 876–878 (1998)
I. Riech, M. L. Gomez-Herrera, P. Diaz, J. G. Mendoza-Alvarez, J. L. Herrera-Perez, E. Marin: Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique. Appl. Phys. Lett. 79, 964–966 (2001)
S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C. A. Wang, J. M. Borrego, G. Nichols: Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by timeresolved photoluminescence. Appl. Phys. Lett. 83, 3317–3319 (2003)
H. K. Choi, S. J. Eglash, G. W. Turner: Double-heterostructure diode lasers emitting at 3 µm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers. Appl. Phys. Lett. 64, 2474–2476 (1994)
H. Lee, P. K. York, R. J. Menna, R. U. Martinelli, D. Z. Garbuzov, S. Y. Narayan, J. C. Connolly: Room-temperature 2.78 µm AlGaAsSb/InGaAsSb quantum-well lasers. Appl. Phys. Lett. 66, 1942–1944 (1995)
H. Lee, P. K. York, R. J. Menna, R. U. Martinelli, D. Garbuzov, S. Y. Narayan: 2.78 µm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy. J. Cryst. Growth 150, 1354–1357 (1995)
M. Grau, C. Lin, M.-C. Amann: Low threshold 2.72 µm GaInAsSb/ AlGaAsSb multi-plequantum-well laser. Electron. Lett. 38, 1678–1679 (2002)
M. Grau, C. Lin, O. Dier, M.-C. Amann: Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.6 µm wavelength. Electron. Lett. 39, 1816–1817 (2003)
M. Grau, C. Lin, M.-C. Amann: Room-temperature 2.81-µm continuous-wave operation of GaInAsSb-AlGaAsSb laser. Photon. Technol. Lett. 16, 383–385 (2004)
A. Salhi, Y. Rouillard, J. Angellier, P. Grech, A. Vicet: 2.61 µm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold. Electron. Lett. 40, 424–425 (2004)
C. Lin, M. Grau, O. Dier, M.-C. Amann: Low threshold room-temperature continuouswave operation of 2.24–3.04 µm GaInAsSb/AlGaAsSb quantum-well lasers. Appl. Phys. Lett. 84, 5088–5090 (2004)
D. Garbuzov, M. Maiorov, H. Lee, V. Khalfin, R. Martinelli, J. Connolly: Temperature dependence of continuous wave threshold current for 2.3–2.6 µm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers. Appl. Phys. Lett. 74, 2990–2992 (1999)
G. A. Sai-Halasz, R. Tsu, L. Esaki: A new semiconductor superlattice. Appl. Phys. Lett. 30, 651–653 (1977)
D. L. Smith, C. Mailhiot: Proposal for strained type II superlattice infrared detectors. J. Appl. Phys. 62, 2545–2548 (1987)
C. H. Grein, P. M. Young, H. Ehrenreich: Theoretical performance of InAs/InxGa1−x Sb superlattice-based midwave infrared lasers. J. Appl. Phys. 76, 1940–1942 (1994)
M. E. Flatté, C. H. Grein, H. Ehrenreich, R. H. Miles, H. Cruz: Theoretical performance limits of 2.1–4.1 µm InAs/InGaSb, HgCdTe, and InGaAsSb lasers. J. Appl. Phys. 78, 4552–4559 (1995)
S. J. Eglash, H. K. Choi: InAsSb/AlAsSb double-heterostructure diode lasers emitting at 4 µm. Appl. Phys. Lett. 64, 833–835 (1994)
D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y. H. Zhang, H. L. Dunlap, L. West: Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices. Appl. Phys. Lett. 67, 3700–3702 (1995)
T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, L. West: Demonstration of 3.5 µm Ga1−x InxSb/InAs superlattice diode-laser. Electron. Lett. 31, 275–276 (1995)
T. C. Hasenberg, R. H. Miles, A. R. Kost, L. West: Recent advances in Sb-based midwave-infrared lasers. J. Quant. Electron. 33, 1403–1406 (1997)
M. E. Flatté, J. T. Olesberg, S. A. Anson, T. F. Boggess, T. C. Hasenberg, R. H. Miles, C. H. Grein: Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers. Appl. Phys. Lett. 70, 3212–3214 (1997)
J. R. Meyer, C. A. Hoffman, F. J. Bartoli, L. R. Ram-Mohan: Type-II quantum-well lasers for the mid-wavelength infrared. Appl. Phys. Lett. 67, 757–759 (1995)
H. K. Choi, G. W. Turner: InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 µm. Appl. Phys. Lett. 67, 332–334 (1995)
J. R. Lindle, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, G. W. Turner, H. K. Choi: Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells. Appl. Phys. Lett. 67, 3153–3155 (1995)
C. H. Grein, P. M. Young, H. Ehrenreich: Minority carrier lifetimes in ideal InGaSb/InAs superlattices. Appl. Phys. Lett. 61, 2905–2907 (1992)
C. H. Grein, P. M. Young, M. E. Flatté, H. Ehrenreich: Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes. J. Appl. Phys. 78, 7143–7152 (1995)
M. E. Flatté, C. H. Grein, H. Ehrenreich: Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations. Appl. Phys. Lett. 72, 1424–1426 (1998)
M. E. Flatté, T. C. Hasenberg, J. T. Olesberg, S. A. Anson, T. F. Boggess, C. Yan, D. L. J. McDaniel: II—V interband 5.2 µm laser operating at 185 K. Appl. Phys. Lett. 71, 3764–3766 (1997)
M. E. Flatté, C. H. Grein: Auger optimization in mid-infrared lasers: the importance of final-state optimization. Optics Express 2, 131–136 (1998)
J. T. Olesberg, M. E. Flatté, T. C. Hasenberg, C. H. Grein: Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures. J. Appl. Phys. 89, 3283–3289 (2001)
M. E. Flatté, J. T. Olesberg, C. H. Grein: Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers. In Proceedings of the 1997 MRS Fall Symposium, volume 484 of Mat. Res. Soc. Proc., pp. 71–81 (1997)
D. Z. Garbuzov, R. U. Martinelli, H. Lee, P. K. York, R. J. Menna, J. C. Connolly, S. Y. Narayan: Ultralow-loss broadened-waveguide high-power 2 µm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers. Appl. Phys. Lett. 69, 2006–2008 (1999)
D. Z. Garbuzov, R. U. Martinelli, H. Lee, R. J. Menna, P. K. York, L. A. DiMarco, M. G. Harvey, R. J. Matarese, S. Y. Narayan, J. C. Connolly: 4 W quasi-continuous-wave output power from 2 µm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes. Appl. Phys. Lett. 70, 2931–2933 (1997)
J. N. Schulman, T. C. McGill: Electronic properties of the AlAs-GaAs (001) interface and superlattice. Phys. Rev. B 19, 6341–6349 (1979)
J. N. Schulman, T. C. McGill: The CdTe/HgTe superlattice: proposal for a new infrared material. Appl. Phys. Lett. 34, 663–665 (1979)
J. N. Schulman, T. C. McGill: Complex band structure and superlattice electronic states. Phys. Rev. B 23, 4149–4155 (1981)
A. Madhukar, R. N. Nucho: The electronic structure of InAs/GaSb (001) superlattices — two dimensional effects. Solid State Commun. 32, 331–336 (1979)
M. Fornari, H. H. Chen, L. Fu, R. D. Graft, D. J. Lohrmann, S. Moroni, G. P. Parravicini, L. Resca, M. A. Stroscio: Electronic structure and wave functions of interface states in HgTe-CdTe quantum wells and superlattices. Phys. Rev. B 55, 16339–16348 (1997)
M. Jaros, K. B. Wong, M. A. Gell: Electronic structure of GaAs-Ga1−x AlxAs quantum well and sawtooth superlattices. Phys. Rev. B 31, 1205–1207 (1985)
I. Morrison, M. Jaros: Electronic and optical properties of ultrathin Si/Ge(001) superlattices. Phys. Rev. B 37, 916–921 (1988)
B. M. Adderley, R. J. Turton, M. Jaros: Absorption spectra of perfect and imperfect Si/Ge superlattices. Phys. Rev. B 49, 16622–16631 (1994)
H. Fu, L.-W. Wang, A. Zunger: Comparison of the k · p and the direct diagonalization approaches for describing the electronic structure of quantum dots. Appl. Phys. Lett. 71, 3433–3435 (1997)
L.-W. Wang, A. Zunger: Pseudopotential-based multiband k · p method for ∼250,000-atom nanostructure systems. Phys. Rev. B 54, 11417–11435 (1996)
C. Jenner, E. Corbin, B. M. Adderley, M. Jaros: InAs/Ga1−x InxSb and InAs/Al1−x GaxSb superlattices for infrared applications. Semicond. Sci. Technol. 13, 359–375 (1998)
G. C. Dente, M. L. Tilton: Pseudopotential methods for superlattices: applications to mid-infrared semiconductor lasers. J. Appl. Phys. 86, 1420–1429 (1999)
G. C. Dente, M. L. Tilton: Comparing pseudopotential predictions for InAs/GaSb superlattices. Phys. Rev. B 66, 165307 (2002)
R. Magri, A. Zunger: Segregation effects on the optical properties of (InAs)/(GaSb) superlattices. Physica E 13, 325–328 (2002)
R. Magri, A. Zunger: Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices. Phys. Rev. B 65, 165302 (2002)
R. Magri, A. Zunger: Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices. Phys. Rev. B 64, 081305 (2001)
M. E. Flatté, P. M. Young, L.-H. Peng, H. Ehrenreich: k · p superlattice theory and intersubband optical transitions. Phys. Rev. B 53, 1963–1978 (1996)
M. F. H. Schuurmans, G. W. ’t Hooft: Simple calculations of confinement states in a quantum well. Phys. Rev. B 31, 8041–8048 (1985)
N. F. Johnson, H. Ehrenreich, P. M. Hui, P. M. Young: Electronic and optical properties of III–V and II–VI semiconductor superlattices. Phys. Rev. B 41, 3655–3669 (1990)
D. L. Smith, C. Mailhiot: Theory of semiconductor superlattice electronic structure. Rev. Mod. Phys. 62, 173–234 (1990)
L. R. Ram-Mohan, J. R. Meyer: Multiband finite element modeling of wave function engineered electro-optical devices. Journal of Nonlinear Optical Physics and Materials 4, 191–243 (1995)
M. S. Hybertsen, M. Schlüter: Theory of optical transitions in Si/Ge(001) strained-layer superlattices. Phys. Rev. B 36, 9683–9693 (1987)
A. Ongstad, R. Kaspi, C. E. Moeller, M. L. Tilton, D. M. Gianardi, J. R. Chavez, G. C. Dente: Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs-GaSb type-II superlattices. J. Appl. Phys. 89, 2185–2188 (2001)
W. H. Lau, M. E. Flatté: Effect of interface structure on the optical properties of InAs/GaSb laser active regions. Appl. Phys. Lett. 80, 1683–1685 (2002)
P. Y. Yu, M. Cardona: Fundamentals of Semiconductors (Springer, New York, 1995)
J. R. Chelikowsky, M. L. Cohen: Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B 14,556–582 (1976)
M. Cardona, F. H. Pollak: Energy-band structure of germanium and silicon. Phys. Rev. 142, 530–543 (1966)
C. Mailhiot, T. C. McGill, D. L. Smith: New approach to the k · p theory of semiconductor superlattices. J. Vac. Sci. Technol. B 2, 371–375 (1984)
I. Prevot, B. Vinter, F. H. Julien, F. Fossard, X. Marcadet: Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices. Phys. Rev. B 64, 195318 (2001)
M. G. Burt: Fundamentals of envelope function theory for electronic states and photonic modes in nanostructures. J. Phys. Condens. Matter 11, R53–R83 (1999)
R. Kaspi, C. Moeller, A. Ongstad, M. L. Tilton, D. Gianardi, G. Dente, P. Gopaladasu: Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices. Appl. Phys. Lett. 76, 409–411 (2000)
O. Krebs, P. Voisin: Giant optical anisotropy of semiconductor heterostructures with no common atom and the quantum-confined pockels effect. Phys. Rev. Lett. 77, 1829–1832 (1996)
S.W. McCahon, S. A. Anson, D.-J. Jang, T. F. Boggess: Generation of 3–4 µm femtosecond pulses from a synchronously pumped, critically phase-matched KTiOPO4 optical parametric oscillator. Opt. Lett. 20, 2309–2311 (1995)
S. W. McCahon, S. A. Anson, D.-J. Jang, M. E. Flatté, T. F. Boggess, D. H. Chow, T. C. Hasenberg, C. H. Grein: Carrier recombination dynamics in a GaInSb/InAs)/AlGaSb superlattice multiple quantum well. Appl. Phys. Lett. 68, 2135–2137 (1996)
P. M. Young, P. M. Hui, H. Ehrenreich: Excitons and interband transitions in iii–v semiconductor superlattices. Phys. Rev. B 44, 12969–12976 (1991)
W.W. Bewley, C. L. Felix, E. H. Aifer, I. Vurgaftman, L. J. Olafsen, J. R. Meyer, H. Lee, U. Martinelli, J. C. Connolly, A. R. Sugg, G. H. Olsen, M. J. Yang, B. R. Bennett, B. V. Shanabrook: Above-room-temperature optically pumped midinfrared W lasers. Appl. Phys. Lett. 73, 3833–3835 (1998)
D.-J. Jang, J. T. Olesberg, M. E. Flatté, T. F. Boggess, T. C. Hasenberg: Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion. Appl. Phys. Lett. 70, 1125–1127 (1997)
W. W. Bewley, C. L. Felix, I. Vurgaftman, D. W. Stokes, E. H. Aifer, L. J. Olafsen, J. R. Meyer, M. J. Yang, B. V. Shanabrook, H. Lee, U. Martinelli, A. R. Sugg: High-temperature continuous-wave 3–6.1 µm “W” lasers with diamond-pressure-bond heat sinking. Appl. Phys. Lett. 74, 1075–1077 (1999)
W.W. Bewley, I. Vurgaftman, C. L. Felix, J. R. Meyer, C.-H. Lin, D. Zhang, S. J. Murry, S. S. Pei, L. R. Ram-Mohan: Role of internal loss in limiting type-II mid-IR laser performance. J. Appl. Phys. 83, 2384–2391 (1998)
A. Sugimura: Band-to-band Auger effect in GaSb and InAs lasers. J. Appl. Phys. 51, 4405–4411 (1980)
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Olesberg, J.T., Flatté, M.E. (2006). Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies. In: Krier, A. (eds) Mid-infrared Semiconductor Optoelectronics. Springer Series in Optical Sciences, vol 118. Springer, London . https://doi.org/10.1007/1-84628-209-8_1
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