Abstract
Low-frequency noise characteristics of Fabry-Pérot (F-P) and distributed feedback, ridge-waveguide and buried-heterostructures InGaAsP/InP multiple-quantum-well lasers investigation has been carrier out. Mode hopping effect characteristic for F-P laser operation is caused by carrier gathering in barrier and cladding layers, and intensive optical and electrical noise during mode hopping is related with recombination in these layers. Defective laser diodes structures can be revealed by noise characteristic investigation, especially the correlation factor is more informative at threshold.
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References
A. Dandridge and H. F. Taylor, Correlation o flow-frequency intensity and frequency fluctuations in GaAlAs lasers, IEEE J. Quant. Electron. QE-18 (1982) 1738–1750.
P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, Progress in long-wavelenght strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers, IEEE J. Quant. Electron. 30 (1994) 477–499.
B. K. Jones, Electrical noise as a measure of quality and reliability in electronic devices, Adv. electron. electron phys. 87 (1994) 201–257.
J. Matukas and V. Palenskis, Low-frequency noise of the metal-gallium arsenide contact at various treatment of semiconductor surface, Lith. Phys. J. 36 (1996) 39–48.
J. F. Hazell, J. G. Simmons, J. D. Evans, and C. Blaauw, The effect of varying barrier height on the operational characteristics of 1.3 μm strained-layer MQW lasers, IEEE J. Quant. Electron. 34 (1998) 2358–2363.
B. B. Elenkrig, S. Smetona, J. G. Simmons, T. Makino, and J. D. Evans, Maximum operating power of 1.3 μm strained layer multiple quantum well InGaAsP lasers, J. Appl. Phys. 85 (1999) 2367–2370.
J. Matukas, V. Palenskis, Č. Pavasaris, E. Šermukšnis, J. Vyšniauskas, S. Pralgauskaitė, G. Letal, S. Smetona, J. G. Simmons, and R. Sobiestijanskas, Optical and electrical characteristics of InGaAsP MQW BH DFB laser diodes, Material science forum 384–385 (2002) 91–94.
G. Letal, S. Smetona, R. Mallard, J. Matukas, V. Palenskis, and S. Pralgauskaitė, Reliability and Low-Frequency Noise Measurements of InGaAsP MQW Buried-Heterostructure Lasers, J. Vac. Sci. Technol. A20 (2002) 1061–1066.
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Pralgauskaitė, S., Palenskis, V., Matukas, J. (2004). Fluctuations of Optical and Electrical Parameters and Their Correlation of Multiple-Quantum-Well INGAAS/INP Lasers. In: Sikula, J., Levinshtein, M. (eds) Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. NATO Science Series II: Mathematics, Physics and Chemistry, vol 151. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2170-4_10
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DOI: https://doi.org/10.1007/1-4020-2170-4_10
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-2169-5
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