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Monolithic Transformer-Coupled RF Power Amplifiers in Si-Bipolar

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Analog Circuit Design

Abstract

Monolithic integrated lumped planar transformers were introduced more than ten years ago. We present a comprehensive review of the electrical characteristics which results in an accurate lumped low-order equivalent model. Amplifiers, mixers and Meissner-type voltage controlled oscillators using monolithic transformers have been published a few years ago. For the first time, integrated transformer-coupled power amplifiers with a high performance up to 2 GHz are demonstrated. This presentation gives an introduction into monolithic transformer and circuit design of push-pull type power amplifiers. Two designs were realized:

  1. 1.

    A monolithic 2.5 V, 1 W Si-bipolar power amplifier with 55% power-added efficiency at 1.9 GHz.

  2. 2.

    A monolithic 2.8 V, 3.2 W Si-bipolar power amplifier with 54% power-added efficiency at 900 MHz.

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© 2003 Kluwer Academic Publishers

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Simbürger, W. et al. (2003). Monolithic Transformer-Coupled RF Power Amplifiers in Si-Bipolar. In: Huijsing, J.H., Steyaert, M., van Roermund, A. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/0-306-47950-8_17

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  • DOI: https://doi.org/10.1007/0-306-47950-8_17

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-7621-7

  • Online ISBN: 978-0-306-47950-2

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