Organometallic Precursors for Atomic Layer Deposition

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Abstract

This review describes the principles and practice of atomic layer deposition (ALD) for thin-film growth emphasising recent progress in precursor chemistry. Various types of metal-containing precursors including conventional volatile inorganic compounds and chelates are introduced with the main emphasis on true organometallics where the metal alkyls and cyclopentadienyl compounds seem most suitable for ALD deposition technology. Organometallic compounds as precursors offer distinct advances in the ALD growth of metals and metal oxides, for instance. Higher precursor reactivity compared to conventional precursors may be utilised in ALD due to separate surface reactions. The advantages compared to conventional precursors often include lower deposition temperatures and lower impurity levels.