Chapter

Precursor Chemistry of Advanced Materials

Volume 9 of the series Topics in Organometallic Chemistry pp 125-145

Date:

Organometallic Precursors for Atomic Layer Deposition

  • Matti PutkonenAffiliated withLaboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology Email author 
  • , Lauri NiinistöAffiliated withLaboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology

* Final gross prices may vary according to local VAT.

Get Access

Abstract

This review describes the principles and practice of atomic layer deposition (ALD) for thin-film growth emphasising recent progress in precursor chemistry. Various types of metal-containing precursors including conventional volatile inorganic compounds and chelates are introduced with the main emphasis on true organometallics where the metal alkyls and cyclopentadienyl compounds seem most suitable for ALD deposition technology. Organometallic compounds as precursors offer distinct advances in the ALD growth of metals and metal oxides, for instance. Higher precursor reactivity compared to conventional precursors may be utilised in ALD due to separate surface reactions. The advantages compared to conventional precursors often include lower deposition temperatures and lower impurity levels.

Atomic layer deposition Thin films Metal alkyl precursors Cyclopentadienyl compounds Metallocenes