Abstract
Carbon films can be formed on SiC and other metal carbides by selective chlorination at high temperature and atmospheric pressure because of the volatility of compounds formed between chlorine and silicon or other metals, and because of the low thermodynamic stability of the corresponding carbon-chlorine compounds. An apparatus has been constructed in which carbon films are formed on metal carbides by reaction with flowing argon-chlorine-hydrogen gas mixtures in a fused silica furnace tube. The structure of the carbon films can be manipulated by controlling the temperature and composition of the reactive gas mixtures. Electron microscopy and Raman spectroscopy have been used to characterize the carbon films formed on β-SiC in Ar-Cl2-H2 gas mixtures at temperatures between 600 and 1000°C.
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© 1998 Springer Science+Business Media Dordrecht
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McNallan, M., Gogotsi, Y., Jeon, I. (1998). Formation of Carbon Films on Ceramic Carbides by High Temperature Chlorination. In: Bhushan, B. (eds) Tribology Issues and Opportunities in MEMS. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5050-7_41
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DOI: https://doi.org/10.1007/978-94-011-5050-7_41
Publisher Name: Springer, Dordrecht
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