2010, pp 431-449

Compact Modeling of Double-Gate and Nanowire MOSFETs

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Abstract

This chapter reviews recent developments on compact modeling of double-gate and nanowire MOSFETs. It starts with the core, long-channel drain current models of double-gate and nanowire MOSFETs, derived from the analytic solutions of 1-D Poisson and current continuity equations in Cartesian and cylindrical coordinates, respectively. Explicit and continuous solutions to the implicit parameters in both models have been developed. The short-channel models based on the scale length approach to the boundary value problems of 2-D Poisson’s equation in subthreshold are then described, followed by charge and capacitance models for both double-gate and nanowire MOSFETs. A popular, surface-potential based current expression in the literature is examined before concluding the chapter.