Abstract
In this paper we present a new theoretical approach for analytical models of lateral bipolar transistors (CLBT, LBT) by using conformal mapping techniques. It is shown that this method leads to closed form solutions for the currents in the devices under realistic boundary conditions. Model equations for CLBT’s and LBT’s are derived and will be compared to numerical simulation results as well as to measurements.
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References
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© 1993 Springer-Verlag Wien
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Freund, D., Kloes, A., Kostka, A. (1993). A 2D Analytical Model of Current-Flow in Lateral Bipolar Transistor Structures. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_105
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_105
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
eBook Packages: Springer Book Archive