FinFET SRAM Design
 Rajiv Joshi,
 Keunwoo Kim,
 Rouwaida Kanj
 … show all 3 hide
Abstract
We present a comprehensive review of finFET devices taking into consideration different levels of interest ranging from the physics of FinFET devices, design considertaions, and applications to memory design and statistics.
We start with fundamental equations that describe the advantages of finFETs in terms of leakage reduction and ON current improvement compared to planar devices. Following this, we look at variability aspects of finFETs such as quantization (L, W, Vt) from a memory design perspective. We then lay the foundation for SRAM yield optimization in terms of cell dynamic behaviour and study different cell designs that leverage the finFET device structure. We also apply statistical methodology to evaluate the finFET variability.
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 Title
 FinFET SRAM Design
 Book Title
 Nanoelectronic Circuit Design
 Pages
 pp 5595
 Copyright
 2011
 DOI
 10.1007/9781441976093_3
 Print ISBN
 9781441974440
 Online ISBN
 9781441976093
 Publisher
 Springer New York
 Copyright Holder
 Springer Science+Business Media, LLC
 Additional Links
 Topics
 Keywords

 FinFET
 SRAM
 Statistical
 Leakage
 double gate
 backgate
 MOSFET
 eBook Packages
 Editors

 Niraj K. Jha ^{(ID1)}
 Deming Chen ^{(ID2)}
 Editor Affiliations

 ID1. Dept. Electrical Engineering, Princeton University
 ID2. Dept. Electrical & Computer Engineering, University of Illinois, UrbanaChampaign
 Authors

 Rajiv Joshi ^{(1)}
 Keunwoo Kim
 Rouwaida Kanj
 Author Affiliations

 1. IBM, Thomas J. Watson Research Center, Yorktown Heights, NY, USA
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