Chapter

Rare Earth Oxide Thin Films

Volume 106 of the series Topics in Applied Physics pp 115-126

Date:

Fabrication and Characterization of Rare Earth Scandate Thin Films Prepared by Pulsed Laser Deposition

  • Jürgen SchubertAffiliated withInstitute of Thin Films and Interfaces, ISG1-IT and Center of Nanoelectronic Systems for Information Technology, CNI, Research Center Jülich
  • , Tassilo HeegAffiliated withInstitute of Thin Films and Interfaces, ISG1-IT and Center of Nanoelectronic Systems for Information Technology, CNI, Research Center Jülich
  • , Martin WagnerAffiliated withInstitute of Thin Films and Interfaces, ISG1-IT and Center of Nanoelectronic Systems for Information Technology, CNI, Research Center Jülich

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Abstract

The continuous structure size reduction in semiconductor technology is leading to a considerable attention for advanced high-κ dielectrics. The rare earth scandates (RE ScO3, where RE is a rare earth element) were recently proposed as candidate materials for the replacement of SiO2 in silicon MOSFETs in either amorphous or epitaxial form. Epitaxial rare earth scandate thin films have been prepared by pulsed laser deposition technique (PLD) on different substrates. Film stoichiometry and quality were investigated by means of Rutherford backscattering spectrometry (RBS), RBS channelling, high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Electrical measurements on MIM-structures show a high dielectric constant of around 20 and low leakage currents.

Keywords

71.55.-i; 72.80.Sk; 73.20.At; 75.47.Lx; 77.55.+f