Book Volume 126 2013

III-Nitride Based Light Emitting Diodes and Applications

Editors:

ISBN: 978-94-007-5862-9 (Print) 978-94-007-5863-6 (Online)

Table of contents (14 chapters)

  1. Front Matter

    Pages I-XIII

  2. No Access

    Chapter

    Pages 1-9

    Introduction Part A. Progress and Prospect of Growth of Wide-Band-Gap III-Nitrides

  3. No Access

    Chapter

    Pages 11-26

    Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

  4. No Access

    Chapter

    Pages 27-58

    Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates

  5. No Access

    Chapter

    Pages 59-81

    Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates

  6. No Access

    Chapter

    Pages 83-119

    Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs

  7. No Access

    Chapter

    Pages 121-152

    Active Region Part A. Internal Quantum Efficiency in LEDs

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    Chapter

    Pages 153-195

    Active Region Part B. Internal Quantum Efficiency

  9. No Access

    Chapter

    Pages 197-229

    Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs

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    Chapter

    Pages 231-269

    Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs

  11. No Access

    Chapter

    Pages 271-290

    Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs

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    Chapter

    Pages 291-326

    Packaging. Phosphors and White LED Packaging

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    Chapter

    Pages 327-348

    High Voltage LEDs

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    Chapter

    Pages 349-371

    Color Quality of White LEDs

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    Chapter

    Pages 373-383

    Emerging System Level Applications for LED Technology

  16. Back Matter

    Pages 385-390