Volume 98 2005

Ferroelectric Thin Films

Basic Properties and Device Physics for Memory Applications

Editors:

ISBN: 978-3-540-24163-8 (Print) 978-3-540-31479-0 (Online)

Table of contents (12 chapters)

  1. No Access

    Book Chapter

    Pages 3-23

    Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films

  2. No Access

    Book Chapter

    Pages 25-59

    Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films

  3. No Access

    Book Chapter

    Pages 59-77

    Pb-Based Ferroelectric Thin Films Prepared by MOCVD

  4. No Access

    Book Chapter

    Pages 77-91

    Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films

  5. No Access

    Book Chapter

    Pages 91-105

    Rhombohedral PZT Thin Films Prepared by Sputtering

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    Book Chapter

    Pages 105-126

    Scanning Nonlinear Dielectric Microscopy

  7. No Access

    Book Chapter

    Pages 127-148

    Analysis of Ferroelectricity and Enhanced Piezoelectricity near the Morphotropic Phase Boundary

  8. No Access

    Book Chapter

    Pages 147-162

    Correlation Between Domain Structures and Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions

  9. No Access

    Book Chapter

    Pages 161-175

    Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites

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    Book Chapter

    Pages 177-199

    Physics of Ferroelectric Interfaces: An Attempt at Nanoferroelectric Physics

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    Book Chapter

    Pages 199-220

    Preparation and Properties of Ferroelectric–Insulator–Semiconductor Junctions Using YMnO3 Thin Films

  12. No Access

    Book Chapter

    Pages 219-241

    Improvement of Memory Retention in Metal–Ferroelectric–Insulator–Semiconductor (MFIS) Structures