Volume 93 2004

Ferroelectric Random Access Memories

Fundamentals and Applications

ISBN: 978-3-540-40718-8 (Print) 978-3-540-45163-1 (Online)

Table of contents (18 chapters)

  1. Front Matter

    Pages -

  2. No Access

    Book Chapter

    Pages 3-16

    Overview

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    Book Chapter

    Pages 17-30

    Novel Si-Substituted Ferroelectric Films

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    Book Chapter

    Pages 31-46

    Static and Dynamic Properties of Domains

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    Book Chapter

    Pages 47-70

    Nanoscale Phenomena in Ferroelectric Thin Films

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    Book Chapter

    Pages 71-84

    The Sputtering Technique

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    Book Chapter

    Pages 85-94

    A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films

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    Book Chapter

    Pages 95-104

    Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

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    Book Chapter

    Pages 105-122

    Materials Integration Strategies

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    Book Chapter

    Pages 123-138

    Characterization by Scanning Nonlinear Dielectric Microscopy

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    Book Chapter

    Pages 139-148

    The Current Status of FeRAM

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    Book Chapter

    Pages 149-164

    Operation Principle and Circuit Design Issues

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    Book Chapter

    Pages 165-176

    High-Density Integration

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    Book Chapter

    Pages 177-196

    Testing and Reliability

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    Book Chapter

    Pages 197-214

    Chain \protect\mbox{FeRAMs}

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    Book Chapter

    Pages 215-232

    Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

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    Book Chapter

    Pages 233-254

    The FET-Type FeRAM

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    Book Chapter

    Pages 255-270

    Ferroelectric Technologies \newline for Portable Equipment

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    Book Chapter

    Pages 271-283

    The Application of FeRAM to Future Information Technology World