Volume 124 2010

Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Editors:

ISBN: 978-90-481-2876-1 (Print) 978-90-481-2877-8 (Online)

Table of contents (11 chapters)

  1. Front Matter

    Pages i-xvi

  2. No Access

    Book Chapter

    Pages 1-24

    Theoretical Modelling of Rare Earth Dopants in GaN

  3. No Access

    Book Chapter

    Pages 25-54

    RE Implantation and Annealing of III-Nitrides

  4. No Access

    Book Chapter

    Pages 55-98

    Lattice Location of RE Impurities in IIINitrides

  5. No Access

    Book Chapter

    Pages 99-113

    Electroluminescent Devices Using RE-Doped III-Nitrides

  6. No Access

    Book Chapter

    Pages 115-157

    Er-Doped GaN and InxGa1-xN for Optical Communications

  7. No Access

    Book Chapter

    Pages 159-188

    Rare-Earth-Doped GaN Quantum Dot

  8. No Access

    Book Chapter

    Pages 189-219

    Visible Luminescent RE-doped GaN, AlGaN and AlInN

  9. No Access

    Book Chapter

    Pages 221-268

    Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride

  10. No Access

    Book Chapter

    Pages 269-307

    Excitation Mechanisms of RE Ions in Semiconductors

  11. No Access

    Book Chapter

    Pages 309-342

    High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd

  12. No Access

    Book Chapter

    Pages 343-345

    Summary and Prospects for Future Work

  13. Back Matter

    Pages 347-355