Volume 27 2007

Advanced Gate Stacks for High-Mobility Semiconductors

ISBN: 978-3-540-71490-3 (Print) 978-3-540-71491-0 (Online)

Table of contents (17 chapters)

  1. Front Matter

    Pages I-XXII

  2. No Access

    Book Chapter

    Pages 1-19

    Strained-Si CMOS Technology

  3. No Access

    Book Chapter

    Pages 21-41

    High Current Drivability MOSFET Fabricated on Si(110) Surface

  4. No Access

    Book Chapter

    Pages 43-72

    Advanced High-Mobility Semiconductor-on-Insulator Materials

  5. No Access

    Book Chapter

    Pages 73-113

    Passivation and Characterization of Germanium Surfaces

  6. No Access

    Book Chapter

    Pages 115-138

    Interface Engineering for High-κ Ge MOSFETs

  7. No Access

    Book Chapter

    Pages 139-164

    Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate Metal-Oxide-Semiconductor Devices

  8. No Access

    Book Chapter

    Pages 165-179

    Modeling of Growth of High-κ Oxides on Semiconductors

  9. No Access

    Book Chapter

    Pages 181-209

    Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs

  10. No Access

    Book Chapter

    Pages 211-228

    Point Defects in Stacks of High-κ Metal Oxides on Ge: Contrast with the Si Case

  11. No Access

    Book Chapter

    Pages 229-256

    High κ Gate Dielectrics for Compound Semiconductors

  12. No Access

    Book Chapter

    Pages 257-267

    Interface Properties of High-κ Dielectrics on Germanium

  13. No Access

    Book Chapter

    Pages 269-292

    A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-κ Materials and Films

  14. No Access

    Book Chapter

    Pages 293-313

    Germanium Nanodevices and Technology

  15. No Access

    Book Chapter

    Pages 315-332

    Opportunities and Challenges of Germanium Channel MOSFETs

  16. No Access

    Book Chapter

    Pages 333-340

    Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

  17. No Access

    Book Chapter

    Pages 341-361

    Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

  18. No Access

    Book Chapter

    Pages 363-374

    Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow

  19. Back Matter

    Pages 375-383