Physics of Semiconductor Devices

17th International Workshop on the Physics of Semiconductor Devices 2013

Editors:

ISBN: 978-3-319-03001-2 (Print) 978-3-319-03002-9 (Online)

Table of contents (241 chapters)

previous Page of 13
  1. Front Matter

    Pages i-xxvi

  2. VLSI and ULSI Technology

    1. Front Matter

      Pages 1-1

    2. No Access

      Book Chapter

      Pages 3-4

      Co-existence of Multiferroic Memories in CoFe2O4/Bi3.4Sm0.6Ti3O12 Composite Structures

    3. No Access

      Book Chapter

      Pages 5-8

      Impact of Fin Sidewall Taper Angle on Sub-14 nm FinFET Device Performance

    4. No Access

      Book Chapter

      Pages 9-11

      Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium

    5. No Access

      Book Chapter

      Pages 13-16

      Effect of Supercritical Drying on Sol-Gel Deposited Silica Aerogel Thin Films at Different Temperatures

    6. No Access

      Book Chapter

      Pages 17-20

      Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs

    7. No Access

      Book Chapter

      Pages 21-23

      T-CAD Design Simulation and Comparative Performance Analysis of 6-T SRAM Cell with Nanoscale SOI and MOS Technology

    8. No Access

      Book Chapter

      Pages 25-27

      Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate

    9. No Access

      Book Chapter

      Pages 29-32

      Resistive Switching in MIM Capacitors Using Porous Anodic Alumina

    10. No Access

      Book Chapter

      Pages 33-36

      Process Model Accuracy Enhancement Using Cluster Based Approach

    11. No Access

      Book Chapter

      Pages 37-39

      Room Temperature-Processed TiO2 MIM Capacitors for DRAM Applications

    12. No Access

      Book Chapter

      Pages 41-44

      Two Input Multiplexer Based on Single-Electronics

  3. High Frequency and Power Devices

    1. Front Matter

      Pages 45-45

    2. No Access

      Book Chapter

      Pages 47-52

      Advancements in SiC Power Devices Using Novel Interface Passivation Processes

    3. No Access

      Book Chapter

      Pages 53-55

      Planar Schottky Varactor Diode Characterization for MMIC Voltage Controlled Oscillator Applications

    4. No Access

      Book Chapter

      Pages 57-65

      Optically-Switched Wide-Bandgap Power Semiconductor Devices and Device-Transition Control

    5. No Access

      Book Chapter

      Pages 67-70

      Study on Temperature Dependence Scattering Mechanisms and Mobility Effects in GaN and GaAs HEMTs

    6. No Access

      Book Chapter

      Pages 71-73

      Study of Oxygen Implantation in GaN/Sapphire

    7. No Access

      Book Chapter

      Pages 75-76

      GaN HEMT Based S-Band Power Amplifier

    8. No Access

      Book Chapter

      Pages 77-80

      Structural and Optical Characterization of β-Ga2O3 Thin Films Grown by Pulsed Laser Deposition

    9. No Access

      Book Chapter

      Pages 81-83

      Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

    10. No Access

      Book Chapter

      Pages 85-87

      Electrical Characterization of Interface States in In/p-Si Schottky Diode From I–V Characteristics

previous Page of 13