2014

Bias Temperature Instability for Devices and Circuits

Editors:

ISBN: 978-1-4614-7908-6 (Print) 978-1-4614-7909-3 (Online)

Table of contents (30 chapters)

previous Page of 2
  1. Front Matter

    Pages i-xi

  2. Part I

    1. Front Matter

      Pages 1-1

    2. No Access

      Book Chapter

      Pages 3-31

      Bias Temperature Instability Characterization Methods

    3. No Access

      Book Chapter

      Pages 33-51

      Application of On-Chip Device Heating for BTI Investigations

    4. No Access

      Book Chapter

      Pages 53-74

      Statistical Characterization of BTI-Induced High-k Dielectric Traps in Nanoscale Transistors

    5. No Access

      Book Chapter

      Pages 75-109

      The Time-Dependent Defect Spectroscopy

    6. No Access

      Book Chapter

      Pages 111-134

      Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise

    7. No Access

      Book Chapter

      Pages 135-160

      BTI-Induced Statistical Variations

    8. No Access

      Book Chapter

      Pages 161-176

      Statistical Distribution of Defect Parameters

    9. No Access

      Book Chapter

      Pages 177-228

      Atomic-Scale Defects Associated with the Negative Bias Temperature Instability

    10. No Access

      Book Chapter

      Pages 229-252

      Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures

    11. No Access

      Book Chapter

      Pages 253-285

      Oxide Defects

    12. No Access

      Book Chapter

      Pages 287-302

      Understanding Negative-Bias Temperature Instability from Dynamic Stress Experiments

  3. Part II

    1. Front Matter

      Pages 303-303

    2. No Access

      Book Chapter

      Pages 305-321

      Atomistic Modeling of Defects Implicated in the Bias Temperature Instability

    3. No Access

      Book Chapter

      Pages 323-348

      Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation

    4. No Access

      Book Chapter

      Pages 349-378

      A Comprehensive Modeling Framework for DC and AC NBTI

    5. No Access

      Book Chapter

      Pages 379-408

      On the Microscopic Limit of the RD Model

    6. No Access

      Book Chapter

      Pages 409-446

      Advanced Modeling of Oxide Defects

    7. No Access

      Book Chapter

      Pages 447-481

      The Capture/Emission Time Map Approach to the Bias Temperature Instability

  4. Part III

    1. Front Matter

      Pages 483-483

    2. No Access

      Book Chapter

      Pages 485-505

      Impact of Hydrogen on the Bias Temperature Instability

    3. No Access

      Book Chapter

      Pages 507-532

      FEOL and BEOL Process Dependence of NBTI

    4. No Access

      Book Chapter

      Pages 533-559

      Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors

previous Page of 2