Authors:
- Presents the first comprehensive reference to reliability and repair techniques for nano-scale memories
- Covers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memories
- Includes a variety of practical circuits and logic, critical for higher yield and reliability, which have been proven successful during the authors’ extensive experience in developing memories and low-voltage CMOS circuits
- Includes supplementary material: sn.pub/extras
Part of the book series: Integrated Circuits and Systems (ICIR)
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Table of contents (6 chapters)
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Front Matter
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Back Matter
About this book
Authors and Affiliations
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Renesas Electronics Corporation, Kodaira-shi, Tokyo, Japan
Masashi Horiguchi
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Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo, Japan
Kiyoo Itoh
Bibliographic Information
Book Title: Nanoscale Memory Repair
Authors: Masashi Horiguchi, Kiyoo Itoh
Series Title: Integrated Circuits and Systems
DOI: https://doi.org/10.1007/978-1-4419-7958-2
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer Science+Business Media, LLC 2011
Hardcover ISBN: 978-1-4419-7957-5Published: 13 January 2011
Softcover ISBN: 978-1-4614-2794-0Published: 24 February 2013
eBook ISBN: 978-1-4419-7958-2Published: 11 January 2011
Series ISSN: 1558-9412
Series E-ISSN: 1558-9420
Edition Number: 1
Number of Pages: X, 218
Topics: Circuits and Systems, Computer-Aided Engineering (CAD, CAE) and Design