Microscopy of Semiconducting Materials

Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK

Editors:

ISBN: 978-3-540-31914-6 (Print) 978-3-540-31915-3 (Online)

Table of contents (113 chapters)

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  1. Epitaxy: Wide Band-Gap Nitrides

    1. Front Matter

      Pages 1-1

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      Pages 3-12

      Structural properties of GaN quantum dots

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      Pages 13-16

      Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes

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      Pages 17-20

      Investigation of InxGa1−x N islands with electron microscopy

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      Pages 21-24

      First stage of nucleation of GaN on (0001) sapphire

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      Pages 25-28

      In GaN-GaN quantum wells: their luminescent and nano-structural properties

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      Pages 29-32

      Evolution of InGaN/GaN nanostructures and wetting layers during annealing

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      Pages 33-43

      Origins and reduction of threading dislocations in GaN epitaxial layers

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      Pages 45-50

      Oxygen segregation to nanopipes in gallium nitride

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      Pages 51-54

      Strain relaxation in (Al,Ga)N/GaN heterostructures

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      Pages 55-58

      A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures

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      Pages 59-62

      Reduction of threading dislocation density using in-situ SiNx interlayers

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      Pages 63-66

      The nucleation structure for cracks in AlGaN epitaxial layers

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      Pages 67-70

      Microstructural and optical characterisation of InN layers grown by MOCVD

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      Pages 71-74

      Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE

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      Pages 75-78

      Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates

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      Pages 79-82

      Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers

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      Pages 83-86

      Characterization of defects in ZnS and GaN

  2. Epitaxy: Silicon-Germanium Alloys

    1. Front Matter

      Pages 87-87

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      Pages 89-92

      Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates

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      Pages 93-96

      TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB

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      Pages 97-102

      Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources

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