Materials for Information Technology

Devices, Interconnects and Packaging

ISBN: 978-1-85233-941-8 (Print) 978-1-84628-235-5 (Online)

Table of contents (40 chapters)

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  1. Recent Advances in Thin-film Deposition

    1. Front Matter

      Pages 1-1

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      Book Chapter

      Pages 3-15

      Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS

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      Book Chapter

      Pages 17-29

      LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs

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      Pages 31-38

      Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices

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      Pages 39-50

      Atomic-layer Deposited Barrier and Seed Layers for Interconnects

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      Pages 51-59

      Copper CVD for Conformal Ultrathin-film Deposition

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      Pages 61-68

      Pushing PVD to the Limits — Recent Advances

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      Pages 69-76

      Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition

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      Pages 77-84

      Selective Airgaps: Towards a Scalable Low-k Solution

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      Pages 85-97

      Silicides — Recent Advances and Prospects

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      Pages 99-108

      TEM Characterization of Strained Silicon

  2. Material Aspects of Non-Volatile Memories

    1. Front Matter

      Pages 109-109

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      Pages 111-125

      An Introduction to Nonvolatile Memory Technology

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      Book Chapter

      Pages 127-138

      Floating-dot Memory Transistors on SOI Substrate

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      Book Chapter

      Pages 139-147

      Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures

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      Pages 149-161

      Scaling of Ferroelectric-based Memory Concepts

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      Pages 163-176

      Device Concepts with Magnetic Tunnel Junctions

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      Book Chapter

      Pages 177-188

      Phase-change Memories

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      Pages 189-196

      Amorphous-to-fcc Transition in GeSbTe Alloys

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      Pages 197-209

      Organic Nonvolatile Memories

  3. Materials for Interconnects

    1. Front Matter

      Pages 211-211

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      Book Chapter

      Pages 213-224

      Interconnect Technology — Today, Recent Advances and a Look into the Future

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      Book Chapter

      Pages 225-239

      Dielectric and Scaling Effects on Electromigration for Cu Interconnects

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