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Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO3 thin films prepared by using chemical solution deposition

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Abstract

We prepared pure BiFeO3 (BFO) and (Bi0.9Eu0.1)(Fe0.975Zn0.025)O3-δ (BEFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BEFZO thin film. The leakage current density of the BEFZO thin film was three orders of magnitude lower than that of the pure BFO, 3.93 × 10−6 A/cm2 at 100 kV/cm. The remnant polarization (2P r ) and the coercive electric field (2E c ) of the BEFZO thin film were 42 µC/cm2 and 898 kV/cm at an applied electric field of 1000 kV/cm and at a frequency of 1 kHz and the values decreased with increasing measurement frequency to 18 µC/cm2 and 866 kV/cm at 10 kHz, respectively. Also, the fatigue endurances were evaluated at peak voltages of 8–10 V after 1.44 × 1010 cycles in the BEFZO thin films and were 70 ∼ 90% of the initial values. We also confirmed that the 2P r was fairly saturated at measurement frequency about 30 kHz for the BEFZO thin film.

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Authors and Affiliations

  1. Department of Physics, Changwon National University, Changwon, 641-773, Korea

    Youn-Jang Kim, Jin Won Kim, Hae Jin Kim & Sang Su Kim

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  1. Youn-Jang Kim
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  2. Jin Won Kim
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  3. Hae Jin Kim
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  4. Sang Su Kim
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Correspondence to Sang Su Kim.

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Kim, YJ., Kim, J.W., Kim, H.J. et al. Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO3 thin films prepared by using chemical solution deposition. Journal of the Korean Physical Society 62, 1019–1023 (2013). https://doi.org/10.3938/jkps.62.1019

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