Research Papers

Journal of the Korean Physical Society

, Volume 61, Issue 3, pp 410-414

Comparison of simulation models for the coaxially-gated carbon-nanotube field-effect transistor

  • Jong-Myeon ParkAffiliated withSchool of Electronics, Telecommunication and Computer Engineering, Korea Aerospace University Email author 
  • , Jae-Hong AnAffiliated withSchool of Electronics, Telecommunication and Computer Engineering, Korea Aerospace University
  • , Shin-Nam HongAffiliated withSchool of Electronics, Telecommunication and Computer Engineering, Korea Aerospace University

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Abstract

Carbon-nanotube field-effect transistors (CNFETs) have received great attention as possible successors to metal-oxide-semiconductor field-effect transistors (MOSFETs) beyond the sub-10 nm era. In this work, numerical simulations were performed on single-walled semiconducting CNFETs using a FETToy simulator and a compact model with or without a smoothing parameter. The discontinuity in the derivative of the surface potential with respect to V GS in the compact model can be remedied by employing a simple smoothing parameter. The simulated output characteristics of CNFETs with a 1.5-nm-thickgate insulator and a 3-nm-diameter nanotube channel exhibited the advantage of using a smoothing parameter. Our results show fairly good matches between the FETToy model and the compact model with a smoothing parameter of less than 5 × 10−4.

Keywords

Carbon nanotube CNFET FETToy Compact model Smoothing parameter