Journal of the Korean Physical Society

, Volume 62, Issue 3, pp 518-522

First online:

Residual strain effects on the luminescence properties of self-organized GaN vertical nanorods grown by using HVPE

  • Sejoon LeeAffiliated withQuantum-functional Semiconductor Research Center, Dongguk University-Seoul Email author 
  • , Youngmin LeeAffiliated withDepartment of Semiconductor Science, Dongguk University-Seoul
  • , Deuk Young KimAffiliated withDepartment of Semiconductor Science, Dongguk University-Seoul

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The optical, structural, and vibrational properties of self-assembled GaN nanorods (NRs) were systematically examined to help understand the impact of residual strains on their emission properties. The GaN NRs grown at temperatures less than 550 °C displayed line-defects along the a-axis, which are responsible for the residual compressive strain in the GaN NRs. The residual compressive strain, which depends on the growth temperature, gave rise to a blue-shift of the effective optical band-gap. Compared to the GaN thin films, the influence of residual strains on the blue-shift were more than 3-times greater for GaN NRs. This implies that growth interruptions to control the growth temperatures and/or source fluxes would be more critical in the fabrication of GaN-NR-based light-emitting devices.


GaN Nanorod Photoluminescence Cathodoluminescence Strain effect