Journal of the Korean Physical Society

, Volume 61, Issue 5, pp 795–798

Coherent growth behavior of an orthorhombic (Ca,Sr)SnO3 thin film on a cubic SrTiO3 (110) substrate

Research Papers

DOI: 10.3938/jkps.61.795

Cite this article as:
Lee, B.W. & Jung, C.U. Journal of the Korean Physical Society (2012) 61: 795. doi:10.3938/jkps.61.795
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Abstract

Ca1−xSrxSnO3 has an orthorhombic crystal structure, and thicker Ca1−xSrxSnO3 buffer layers having a relaxed growth behavior have been successfully used to control the growth orientation and the strain status of a SrRuO3 film on top of a SrTiO3 (110) substrate. In this work, we report the coherent growth behavior of Ca0.7Sr0.3SnO3 films having smaller thicknesses. The structural information obtained from X-ray diffraction (XRD) θ-2θ scans and reciprocal-space mapping measurements showed that 1) the unit-cell volume was smaller for the films grown at higher temperatures and 2) the degree of coherent epitaxy of the films was better along the SrTiO3 [1–10] in-plane direction than along the SrTiO3 [001] in-plane direction. These were interpreted based on 1) the inherently lower lattice mismatch of the orthorhombic crystal along the cubic substrate’s [1–10] in-plane direction than along the cubic substrate’s [001] in-plane direction, 2) the higher efficiency of oxygen annealing at higher temperatures, and 3) the dynamic (kinetic) process during the film growth.

Keywords

Anisotropic in-plane epitaxyCubic (110) substrateOrthorhombic distortionLattice mismatch, Kinetic processCa1−xSrxSnO3Thin filmCoherent growth

Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  1. 1.Department of PhysicsHankuk University of Foreign StudiesYonginKorea