, Volume 61, Issue 5, pp 795-798
Date: 12 Sep 2012

Coherent growth behavior of an orthorhombic (Ca,Sr)SnO3 thin film on a cubic SrTiO3 (110) substrate

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Ca1−x Sr x SnO3 has an orthorhombic crystal structure, and thicker Ca1−x Sr x SnO3 buffer layers having a relaxed growth behavior have been successfully used to control the growth orientation and the strain status of a SrRuO3 film on top of a SrTiO3 (110) substrate. In this work, we report the coherent growth behavior of Ca0.7Sr0.3SnO3 films having smaller thicknesses. The structural information obtained from X-ray diffraction (XRD) θ-2θ scans and reciprocal-space mapping measurements showed that 1) the unit-cell volume was smaller for the films grown at higher temperatures and 2) the degree of coherent epitaxy of the films was better along the SrTiO3 [1–10] in-plane direction than along the SrTiO3 [001] in-plane direction. These were interpreted based on 1) the inherently lower lattice mismatch of the orthorhombic crystal along the cubic substrate’s [1–10] in-plane direction than along the cubic substrate’s [001] in-plane direction, 2) the higher efficiency of oxygen annealing at higher temperatures, and 3) the dynamic (kinetic) process during the film growth.