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Electron-phonon interaction and Raman scattering in doped GaAs/AlAs superlattices

  • Fundamental Problems of Photonic Devices Based on Semiconductor Heterostructures
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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

The Raman scattering spectroscopy method is used to study the interaction of phonons and free charge carriers in doped semiconductor nanostructures (superlattices). In doped superlattices based on polar semiconductors, the collective vibrational modes of free charge carriers (plasmons) shield the long-range Coulomb interaction of cations and anions, which leads to the formation of mixed phononplasmon modes. The angular dispersion (anisotropy) of phonon-plasmon modes in doped GaAs/AlAs superlattices is studied. The observed anisotropy is due to the anisotropy of dielectric permeability in superlattices.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’ev 13, Novosibirsk, 630090, Russia

    V. A. Volodin

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    V. A. Volodin

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  1. V. A. Volodin
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Correspondence to V. A. Volodin.

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Original Russian Text © V.A. Volodin, 2014, published in Avtometriya, 2014, Vol. 50, No. 3, pp. 68–73.

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Volodin, V.A. Electron-phonon interaction and Raman scattering in doped GaAs/AlAs superlattices. Optoelectron.Instrument.Proc. 50, 271–275 (2014). https://doi.org/10.3103/S8756699014030091

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  • DOI: https://doi.org/10.3103/S8756699014030091

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