Abstract
The structure of extended defects introduced into Si by means of boron implantation followed by thermal annealing at T = 900 °C is studied by the method of high-resolution transmission electron microscopy and computer modeling for different values of the implantation dosage (D) and concentration of boron atoms in substitutional positions B0 \((C_{B_0 } )\) injected into the Si lattice before implantation. It is shown that the Frank dislocation loops of both interstitial (I) and vacancy (V) type at a ratio of 4: 1 are observed in Si samples with D = 1016 cm−2 up to \(C_{B_0 } \) = 0.8·1020 cm−3. The atomic structure of the I-type Frank dislocation loops is heavily deformed, which suggests segregation of finely dispersed boron in the defect plane. At the same time, the structure of the V-type Frank dislocation loops tends to be reconstructed due to interaction with self-interstitials. At \(C_{B_0 } \) = 2.5·1020 cm−3, the I-type Frank dislocation loops are found to transform to perfect dislocation loops, and boron precipitates with a high density appear in Si. Based on the results obtained, probable reasons for vacancy deficit formation in boron-implanted Si are discussed.
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Original Russian Text © L.I. Fedina, A.K. Gutakovskii, A.V. Latyshev, 2014, published in Avtometriya, 2014, Vol. 50, No. 3, pp. 34–40.
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Fedina, L.I., Gutakovskii, A.K. & Latyshev, A.V. Atomic structure of extended defects in boron-implanted silicon layers. Optoelectron.Instrument.Proc. 50, 241–246 (2014). https://doi.org/10.3103/S8756699014030042
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DOI: https://doi.org/10.3103/S8756699014030042