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Low-frequency noises in the metal-semiconductor contact

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

CVC and low-frequency noises of metal-semiconductor structures were investigated at the room temperature. CVC and low-frequency noise spectra of the diode structures with the Schottky barrier based on the Fe/n-Si, Cr/n-Si and W/n-Si are obtained. It is shown that the CVC, the noise level and its frequency index are strongly depend on the choice of metal contact and its surface area. The physical processes that influence the level and the behavior of low-frequency noises are revealed. From the standpoint of reducing the level of low-frequency noises it was found that the contact material of chromium is better as compared with the iron or wolfram.

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Authors and Affiliations

  1. Yerevan State University, Yerevan, Armenia

    H. D. Khondkaryan & F. V. Gasparyan

Authors
  1. H. D. Khondkaryan
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  2. F. V. Gasparyan
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Correspondence to H. D. Khondkaryan.

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Original Russian Text © H.D. Khondkaryan, F.V. Gasparyan, 2015, published in Izvestiya NAN Armenii, Fizika, 2015, Vol. 50, No. 2, pp. 227–235.

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Khondkaryan, H.D., Gasparyan, F.V. Low-frequency noises in the metal-semiconductor contact. J. Contemp. Phys. 50, 170–176 (2015). https://doi.org/10.3103/S1068337215020103

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  • DOI: https://doi.org/10.3103/S1068337215020103

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