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Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation

  • Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The effect applied voltage frequency has on bipolar resistive switching in microcontact type heterostructures based on thin films and single crystals of bismuth selenide is studied both experimentally and via numerical simulation.

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Correspondence to N. A. Tulina.

Additional information

Original Russian Text © N.A. Tulina, A.N. Rossolenko, I.M. Shmytko, N.N. Kolesnikov, D.N. Borisenko, V.V. Sirotkin, I.Yu. Borisenko, 2016, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2016, Vol. 80, No. 6, pp. 741–743.

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Tulina, N.A., Rossolenko, A.N., Shmytko, I.M. et al. Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation. Bull. Russ. Acad. Sci. Phys. 80, 672–674 (2016). https://doi.org/10.3103/S1062873816060381

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  • DOI: https://doi.org/10.3103/S1062873816060381

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