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Properties of MnSb/GaAs heterostructures

  • Proceedings of the International Symposium “Nanophysics and Nanoelectronics”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

MnSb layers are deposited on GaAs(100) via the laser ablation of Mn and Sb targets. The magnetic field dependences of the transverse Kerr effect display magnetic anisotropy and magnetization jumps. Measurements of the Hall effect reveal a hysteresis loop at temperatures of up to 300 K.

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Correspondence to Yu. A. Danilov.

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Original Russian Text © O.V. Vikhrova, Yu.A. Danilov, M.V. Dorokhin, Yu.N. Drozdov, B.N. Zvonkov, A.V. Zdoroveishev, A.V. Kudrin, I.L. Kalentyeva, 2013, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2013, Vol. 77, No. 1, pp. 79–81.

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Vikhrova, O.V., Danilov, Y.A., Dorokhin, M.V. et al. Properties of MnSb/GaAs heterostructures. Bull. Russ. Acad. Sci. Phys. 77, 69–71 (2013). https://doi.org/10.3103/S1062873813010206

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  • DOI: https://doi.org/10.3103/S1062873813010206

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