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Load network for microwave class F amplifier

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Abstract

In this paper we present the technique for development and calculation of the load network for the microwave class F power amplifier (PA) with addition of the third and the fifth voltage harmonics. The suggested load network compensates negative influence of parasitic elements of the transistor (of output capacitance and of output inductance) on the operation of class F PA. Also the load network allows one to decrease the negative influence of some real properties of the supply circuit shunt capacitor and the blocking capacitor on the impedances, which are created by the load network at the transistor chip. We have obtained the calculation formula for the transistor load resistance at the specified output power for class F PA with addition of the third and the fifth voltage harmonics.

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Authors and Affiliations

  1. Donetsk National University, Vinnitsa, Ukraine

    A. Yefymovych, V. G. Krizhanovski & V. Kovalenko

  2. University of Rome Tor Vergata, Rome, Italy

    R. Giofrè, P. Colantonio & R. Danieli

Authors
  1. A. Yefymovych
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  2. V. G. Krizhanovski
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  3. V. Kovalenko
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  4. R. Giofrè
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  5. P. Colantonio
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  6. R. Danieli
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Corresponding author

Correspondence to A. Yefymovych.

Additional information

Original Russian Text © A. Yefymovych, V.G. Krizhanovski, V. Kovalenko, R. Giofrè, P. Colantonio, R. Danieli, 2015, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2015, Vol. 58, No. 7, pp. 3–17.

ORCID: 0000-0002-2685-9740

ORCID: 0000-0002-7503-0373

ORCID: 0000-0002-5788-1262

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Yefymovych, A., Krizhanovski, V.G., Kovalenko, V. et al. Load network for microwave class F amplifier. Radioelectron.Commun.Syst. 58, 291–303 (2015). https://doi.org/10.3103/S0735272715070018

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  • DOI: https://doi.org/10.3103/S0735272715070018

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