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Photothermovoltaic effect in a pSi-n(Si2)1 − xy (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

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Abstract

The results of creating a variband epitaxial (Si2)1 − xy (ZnSe) x (GaP) y layer and observing the photothermovoltaic effect in a pSi-n(Si2)1 − xy (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) heterostructure heated by concentrated solar radiation are detailed. It is shown that the photothermal and thermal voltages in the heterostructure equal 5.8 and 1.2 mV at a temperature of 80°C. The observed relatively high photothermal voltage value is attributed to the possible extrinsic thermophotoelectric effect in the layer of diluted solid solution adjacent to the p-n junction.

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References

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Original Russian Text © A.S. Saidov, M.S. Saidov, Sh.N. Usmonov, U.Kh. Rakhmonov, 2013, published in Geliotekhnika, 2013, No. 4, pp. 58–61.

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Saidov, A.S., Saidov, M.S., Usmonov, S.N. et al. Photothermovoltaic effect in a pSi-n(Si2)1 − xy (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure. Appl. Sol. Energy 49, 241–243 (2013). https://doi.org/10.3103/S0003701X13040154

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  • DOI: https://doi.org/10.3103/S0003701X13040154

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