Abstract
The results of creating a variband epitaxial (Si2)1 − x − y (ZnSe) x (GaP) y layer and observing the photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) heterostructure heated by concentrated solar radiation are detailed. It is shown that the photothermal and thermal voltages in the heterostructure equal 5.8 and 1.2 mV at a temperature of 80°C. The observed relatively high photothermal voltage value is attributed to the possible extrinsic thermophotoelectric effect in the layer of diluted solid solution adjacent to the p-n junction.
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Saidov, M.S., Appl. Solar Energy, 2012, vol. 48, no. 1, p. 1.
Saidov, M.S., Appl. Solar Energy, 2012, vol. 48, no. 4, p. 233.
Saidov, A.S., Usmonov, Sh.N., and Rakhmonov, U.Kh., Appl. Solar Energy, 2010, vol. 46, no. 3, p. 209.
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Original Russian Text © A.S. Saidov, M.S. Saidov, Sh.N. Usmonov, U.Kh. Rakhmonov, 2013, published in Geliotekhnika, 2013, No. 4, pp. 58–61.
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Saidov, A.S., Saidov, M.S., Usmonov, S.N. et al. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure. Appl. Sol. Energy 49, 241–243 (2013). https://doi.org/10.3103/S0003701X13040154
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DOI: https://doi.org/10.3103/S0003701X13040154