, Volume 38, Issue 2, pp 41-47
Date: 24 Mar 2011

Scanning probe microscopy of cleavages of undoped GaInP/AlGaInP and CdS/ZnSSe heterostructures

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Abstract

Cleavages of undoped nanoscale heterostructures with GaInP/AlGaInP and CdS/ZnSSe quantum wells were studied by scanning probe microscopy. A nanorelief formed on the cleavage surface due to elastic stresses in quantum wells was detected by contact methods. The current method yielded more contrast images. It was shown that the current in undoped heterostructures depends on the Schottky barrier on the probe contact with structure layers, the intrinsic carrier concentration in them, the growth substrate doping level, the intensity and spectrum of external illumination.

Original Russian Text © D.E. Sviridov, V.I. Kozlovskii, N.V. Zabavin, 2011, published in Kratkie Soobshcheniya po Fizike, 2011, Vol. 38, No. 2, pp. 19–29.