Scanning probe microscopy of cleavages of undoped GaInP/AlGaInP and CdS/ZnSSe heterostructures
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Cleavages of undoped nanoscale heterostructures with GaInP/AlGaInP and CdS/ZnSSe quantum wells were studied by scanning probe microscopy. A nanorelief formed on the cleavage surface due to elastic stresses in quantum wells was detected by contact methods. The current method yielded more contrast images. It was shown that the current in undoped heterostructures depends on the Schottky barrier on the probe contact with structure layers, the intrinsic carrier concentration in them, the growth substrate doping level, the intensity and spectrum of external illumination.
- Scanning probe microscopy of cleavages of undoped GaInP/AlGaInP and CdS/ZnSSe heterostructures
Bulletin of the Lebedev Physics Institute
Volume 38, Issue 2 , pp 41-47
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- Allerton Press, Inc.
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- quantum wells
- atomic-force microscopy