Bulletin of the Lebedev Physics Institute

, Volume 38, Issue 2, pp 41–47

Scanning probe microscopy of cleavages of undoped GaInP/AlGaInP and CdS/ZnSSe heterostructures

  • D. E. Sviridov
  • V. I. Kozlovskii
  • N. V. Zabavin
Article

DOI: 10.3103/S1068335611020035

Cite this article as:
Sviridov, D.E., Kozlovskii, V.I. & Zabavin, N.V. Bull. Lebedev Phys. Inst. (2011) 38: 41. doi:10.3103/S1068335611020035

Abstract

Cleavages of undoped nanoscale heterostructures with GaInP/AlGaInP and CdS/ZnSSe quantum wells were studied by scanning probe microscopy. A nanorelief formed on the cleavage surface due to elastic stresses in quantum wells was detected by contact methods. The current method yielded more contrast images. It was shown that the current in undoped heterostructures depends on the Schottky barrier on the probe contact with structure layers, the intrinsic carrier concentration in them, the growth substrate doping level, the intensity and spectrum of external illumination.

Key words

quantum wells heterostructures atomic-force microscopy 

Copyright information

© Allerton Press, Inc. 2011

Authors and Affiliations

  • D. E. Sviridov
    • 1
  • V. I. Kozlovskii
    • 1
  • N. V. Zabavin
    • 1
  1. 1.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia