Abstract
The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ xx /ρ0 have been measured for p-InAs (R H = 22.5 cm3/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs2 (R H = 5 cm3/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ xx /ρ0 (P, H) for p-InAs:Mn and p-CdGeAs2:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs2:Mn with a pressure drop.
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Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, V.M. Novotortsev, S.F. Marenkin, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 7, pp. 1048–1050.
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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. High-pressure induced magnetoresistance in p-InAs:Mn and p-CdGeAs2:Mn. Bull. Russ. Acad. Sci. Phys. 73, 992–994 (2009). https://doi.org/10.3103/S1062873809070405
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DOI: https://doi.org/10.3103/S1062873809070405