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Pd/GaN(0001) interface properties

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Materials Science-Poland

Abstract

This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED).

As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd/GaN interface formed at RT. The Schottky barrier height of the Pd/GaN contact is equal to 1.60 eV.

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Authors and Affiliations

  1. Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland

    M. Grodzicki, P. Mazur, S. Zuber, J. Pers & A. Ciszewski

Authors
  1. M. Grodzicki
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  2. P. Mazur
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  3. S. Zuber
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  4. J. Pers
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  5. A. Ciszewski
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Corresponding author

Correspondence to J. Pers.

Additional information

This paper was presented at XIX International Seminar on Physics and Chemistry of Solids (ISPCS) and Advanced Materials, Częstochowa 12–15 June 2013.

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Grodzicki, M., Mazur, P., Zuber, S. et al. Pd/GaN(0001) interface properties. Mater Sci-Pol 32, 252–256 (2014). https://doi.org/10.2478/s13536-013-0183-8

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  • DOI: https://doi.org/10.2478/s13536-013-0183-8

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