Opto-Electronics Review

, Volume 22, Issue 2, pp 118–126

MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

  • P. Martyniuk
  • A. Koźniewski
  • A. Kębłowski
  • W. Gawron
  • A. Rogalski
Original Papers

DOI: 10.2478/s11772-014-0186-y

Cite this article as:
Martyniuk, P., Koźniewski, A., Kębłowski, A. et al. Opto-Electron. Rev. (2014) 22: 118. doi:10.2478/s11772-014-0186-y
  • 144 Downloads

Abstract

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N+pP+n+ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ∼8.7×1010 cmHz1/2/W, responsivity ∼1.72 A/W and time response ∼ 145 ps (V = 200 mV).

Keywords

MWIR SWIR HgCdTe heterostructures HOT detectors 

Copyright information

© Versita Warsaw and Springer-Verlag Wien 2014

Authors and Affiliations

  • P. Martyniuk
    • 1
  • A. Koźniewski
    • 2
  • A. Kębłowski
    • 2
  • W. Gawron
    • 1
  • A. Rogalski
    • 1
  1. 1.Institute of Applied PhysicsMilitary University of TechnologyWarsawPoland
  2. 2.Vigo System S.A.Ożarów MazowieckiPoland

Personalised recommendations