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Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

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Opto-Electronics Review

Abstract

Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

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Authors and Affiliations

  1. Institute of Physics, Wrocław University of Technology, 27 Wybrzeże Wyspiańskiego Str., 50-370, Wrocław, Poland

    M. Motyka, F. Janiak, K. Ryczko, G. Sęk & J. Misiewicz

  2. Technische Physik, University of Würzburg, Wilhelm-Conrad-Rötgen-Research Center for Complex Material Systems, Am Hubland, D-97074, Würzburg, Germany

    A. Bauer, R. Weih, S. Höfling, M. Kamp & A. Forchel

Authors
  1. M. Motyka
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  2. F. Janiak
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  3. K. Ryczko
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  4. G. Sęk
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  5. J. Misiewicz
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  6. A. Bauer
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  7. R. Weih
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  8. S. Höfling
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  9. M. Kamp
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  10. A. Forchel
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Corresponding author

Correspondence to M. Motyka.

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Motyka, M., Janiak, F., Ryczko, K. et al. Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity. Opto-Electron. Rev. 19, 137–139 (2011). https://doi.org/10.2478/s11772-011-0016-4

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  • DOI: https://doi.org/10.2478/s11772-011-0016-4

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